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Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators

Y. Guo, H. Li, S. J. Clark, J. Robertson, Yuzheng Guo Orcid Logo

The Journal of Physical Chemistry C, Volume: 123, Issue: 9, Pages: 5562 - 5570

Swansea University Author: Yuzheng Guo Orcid Logo

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DOI (Published version): 10.1021/acs.jpcc.9b00152

Abstract

The band offsets of heterojunctions of three-dimensionally (3D) bonded semiconductors lie between two limits, the electron affinity rule (unpinned limit) and the matching of the charge neutrality levels (CNLs), equivalent to the pinned limit. It is shown that it has been difficult to compare the val...

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Published in: The Journal of Physical Chemistry C
ISSN: 1932-7447 1932-7455
Published: 2019
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa49218
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first_indexed 2019-03-18T13:59:31Z
last_indexed 2019-05-14T13:56:49Z
id cronfa49218
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spelling 2019-05-13T13:34:01.0595345 v2 49218 2019-03-18 Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators 2c285ab01f88f7ecb25a3aacabee52ea 0000-0003-2656-0340 Yuzheng Guo Yuzheng Guo true false 2019-03-18 GENG The band offsets of heterojunctions of three-dimensionally (3D) bonded semiconductors lie between two limits, the electron affinity rule (unpinned limit) and the matching of the charge neutrality levels (CNLs), equivalent to the pinned limit. It is shown that it has been difficult to compare the validity of these cases because most experimental and theoretical tests require a lattice matching across the heterojunction, and most semiconductors with the same lattice constant have similar average band energies referred to the vacuum level. A second point is that the CNL when referenced to the vacuum level varies surprisingly weakly with the midgap energy with respect to the vacuum level. A calculation of band offsets for heterojunctions with larger lattice mismatch provides a stronger test, and this result is found to favor the CNL matching model. This result is important for many practical device heterojunctions, where unmatched interfaces are common. Journal Article The Journal of Physical Chemistry C 123 9 5562 5570 1932-7447 1932-7455 31 12 2019 2019-12-31 10.1021/acs.jpcc.9b00152 COLLEGE NANME General Engineering COLLEGE CODE GENG Swansea University 2019-05-13T13:34:01.0595345 2019-03-18T10:24:55.2995268 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering Y. Guo 1 H. Li 2 S. J. Clark 3 J. Robertson 4 Yuzheng Guo 0000-0003-2656-0340 5 0049218-25032019153755.pdf guo2019.pdf 2019-03-25T15:37:55.5430000 Output 610179 application/pdf Accepted Manuscript true 2020-02-12T00:00:00.0000000 true eng
title Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators
spellingShingle Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators
Yuzheng Guo
title_short Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators
title_full Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators
title_fullStr Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators
title_full_unstemmed Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators
title_sort Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators
author_id_str_mv 2c285ab01f88f7ecb25a3aacabee52ea
author_id_fullname_str_mv 2c285ab01f88f7ecb25a3aacabee52ea_***_Yuzheng Guo
author Yuzheng Guo
author2 Y. Guo
H. Li
S. J. Clark
J. Robertson
Yuzheng Guo
format Journal article
container_title The Journal of Physical Chemistry C
container_volume 123
container_issue 9
container_start_page 5562
publishDate 2019
institution Swansea University
issn 1932-7447
1932-7455
doi_str_mv 10.1021/acs.jpcc.9b00152
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering
document_store_str 1
active_str 0
description The band offsets of heterojunctions of three-dimensionally (3D) bonded semiconductors lie between two limits, the electron affinity rule (unpinned limit) and the matching of the charge neutrality levels (CNLs), equivalent to the pinned limit. It is shown that it has been difficult to compare the validity of these cases because most experimental and theoretical tests require a lattice matching across the heterojunction, and most semiconductors with the same lattice constant have similar average band energies referred to the vacuum level. A second point is that the CNL when referenced to the vacuum level varies surprisingly weakly with the midgap energy with respect to the vacuum level. A calculation of band offsets for heterojunctions with larger lattice mismatch provides a stronger test, and this result is found to favor the CNL matching model. This result is important for many practical device heterojunctions, where unmatched interfaces are common.
published_date 2019-12-31T04:00:02Z
_version_ 1763753068712689664
score 11.036706

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