Journal article 811 views
Modeling of surface gap state passivation and Fermi level de-pinning in solar cells
Haichang Lu,
Yuzheng Guo 
,
Hongfei Li,
John Robertson
,
Hongfei Li,
John Robertson
Applied Physics Letters, Volume: 114, Issue: 22, Start page: 222106
Swansea University Author:
Yuzheng Guo
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1063/1.5100599
Abstract
The behavior of gap states due to coordination defects (e.g., dangling bonds) and metal induced gap states (MIGS) is compared using density functional supercell calculations. While both types of gap states cause carrier recombination, they are passivated in different ways. Defects can be passivated...
| Published in: | Applied Physics Letters |
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| ISSN: | 0003-6951 1077-3118 |
| Published: |
2019
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa50748 |
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| Abstract: |
The behavior of gap states due to coordination defects (e.g., dangling bonds) and metal induced gap states (MIGS) is compared using density functional supercell calculations. While both types of gap states cause carrier recombination, they are passivated in different ways. Defects can be passivated by shifting their states out of the gap, whereas MIGS lie on normally coordinated atoms and their states cannot be shifted. Their “passivation” requires the insertion of an insulating layer to attenuate them sufficiently before they enter the semiconductor. We show that MIGS also cause Fermi level pinning, inhibiting the control of the work function by the contacts, and so they must also be attenuated to enable certain solar cell designs. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
22 |
| Start Page: |
222106 |