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Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface

Jun Hong Park, Atresh Sanne, Yuzheng Guo Orcid Logo, Matin Amani, Kehao Zhang, Hema C. P. Movva, Joshua A. Robinson, Ali Javey, John Robertson, Sanjay K. Banerjee, Andrew C. Kummel

Science Advances, Volume: 3, Issue: 10, Start page: e1701661

Swansea University Author: Yuzheng Guo Orcid Logo

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DOI (Published version): 10.1126/sciadv.1701661

Abstract

Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine...

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Published in: Science Advances
ISSN: 2375-2548
Published: American Association for the Advancement of Science (AAAS) 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa37808
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Abstract: Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine (TiOPc) and a ML of MoS2 is investigated as a defect passivation method. A strong negative charge transfer from MoS2 to TiOPc molecules is observed in scanning tunneling microscopy. As a result of the formation of a van der Waals interface, the ION/IOFF in back-gated MoS2 transistors increases by more than two orders of magnitude, whereas the degradation in the photoluminescence signal is suppressed. Density functional theory modeling reveals a van der Waals interaction that allows sufficient charge transfer to remove defect states in MoS2. The present organic-TMD interface is a model system to control the surface/interface states in TMDs by using charge transfer to a van der Waals bonded complex.
Item Description: 2019 This work has led to the author being invited to speak at MRS spring meeting.
College: Faculty of Science and Engineering
Issue: 10
Start Page: e1701661

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