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Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface / Jun Hong Park; Atresh Sanne; Yuzheng Guo; Matin Amani; Kehao Zhang; Hema C. P. Movva; Joshua A. Robinson; Ali Javey; John Robertson; Sanjay K. Banerjee; Andrew C. Kummel

Science Advances, Volume: 3, Issue: 10, Start page: e1701661

Swansea University Author: Guo, Yuzheng

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DOI (Published version): 10.1126/sciadv.1701661

Abstract

Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine...

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Published in: Science Advances
ISSN: 2375-2548
Published: 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa37808
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Abstract: Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine (TiOPc) and a ML of MoS2 is investigated as a defect passivation method. A strong negative charge transfer from MoS2 to TiOPc molecules is observed in scanning tunneling microscopy. As a result of the formation of a van der Waals interface, the ION/IOFF in back-gated MoS2 transistors increases by more than two orders of magnitude, whereas the degradation in the photoluminescence signal is suppressed. Density functional theory modeling reveals a van der Waals interaction that allows sufficient charge transfer to remove defect states in MoS2. The present organic-TMD interface is a model system to control the surface/interface states in TMDs by using charge transfer to a van der Waals bonded complex.
College: College of Engineering
Issue: 10
Start Page: e1701661