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On the effect of surface recombination in thin film solar cells, light emitting diodes and photodetectors

Oskar J. Sandberg, Ardalan Armin Orcid Logo

Synthetic Metals, Volume: 254, Pages: 114 - 121

Swansea University Author: Ardalan Armin Orcid Logo

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Abstract

Radiative and non-radiative charge carrier recombination in thin-film diodes plays a key role in determining the efficiency of electronic devices made of next generation semiconductors such as organic, perovskite and nanocrystals. In this work, we show that lowering the bulk recombination does not n...

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Published in: Synthetic Metals
ISSN: 03796779
Published: 2019
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URI: https://cronfa.swan.ac.uk/Record/cronfa50764
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spelling 2019-06-24T14:48:41.1700703 v2 50764 2019-06-08 On the effect of surface recombination in thin film solar cells, light emitting diodes and photodetectors 22b270622d739d81e131bec7a819e2fd 0000-0002-6129-5354 Ardalan Armin Ardalan Armin true false 2019-06-08 SPH Radiative and non-radiative charge carrier recombination in thin-film diodes plays a key role in determining the efficiency of electronic devices made of next generation semiconductors such as organic, perovskite and nanocrystals. In this work, we show that lowering the bulk recombination does not necessarily result in enhanced performance metrics of electronic devices. From the perspective of charge carrier extraction and injection, the radiative limit of the open-circuit voltage of solar cells, noise current of photodetectors and lasing threshold of injection lasers cannot be improved if the contacts are not perfectly selective. A numerical drift-diffusion model is used to investigate the interplay between bulk recombination and surface recombination of minority carriers at the contacts in bipolar thin diode devices based on low-mobility semiconductors. The surface recombination becomes prominent in case of reduced bulk recombination strengths when non-selective contacts, i. e. contacts that are either metallic or have imperfect charge-selective interlayer, are employed. Finally, we derive analytical approximations for the case when diffusion-limited surface recombination of minority carriers at Ohmic contacts dominates the dark current. These results indicate that having perfectly selective contacts becomes crucial in systems with suppressed bulk recombination – a challenging requirement for future state-of-the-art thin-film solar cells, light-emitting devices and photodetectors made of next generation semiconductors. Journal Article Synthetic Metals 254 114 121 03796779 31 8 2019 2019-08-31 10.1016/j.synthmet.2019.06.008 COLLEGE NANME Physics COLLEGE CODE SPH Swansea University 2019-06-24T14:48:41.1700703 2019-06-08T00:13:10.9262642 College of Science Physics Oskar J. Sandberg 1 Ardalan Armin 0000-0002-6129-5354 2 0050764-08062019001423.pdf RevisedMS.pdf 2019-06-08T00:14:23.6570000 Output 722597 application/pdf Accepted Manuscript true 2020-12-18T00:00:00.0000000 Released under the terms of a Creative Commons Attribution Non-Commercial No Derivatives License (CC-BY-NC-ND). true eng
title On the effect of surface recombination in thin film solar cells, light emitting diodes and photodetectors
spellingShingle On the effect of surface recombination in thin film solar cells, light emitting diodes and photodetectors
Ardalan Armin
title_short On the effect of surface recombination in thin film solar cells, light emitting diodes and photodetectors
title_full On the effect of surface recombination in thin film solar cells, light emitting diodes and photodetectors
title_fullStr On the effect of surface recombination in thin film solar cells, light emitting diodes and photodetectors
title_full_unstemmed On the effect of surface recombination in thin film solar cells, light emitting diodes and photodetectors
title_sort On the effect of surface recombination in thin film solar cells, light emitting diodes and photodetectors
author_id_str_mv 22b270622d739d81e131bec7a819e2fd
author_id_fullname_str_mv 22b270622d739d81e131bec7a819e2fd_***_Ardalan Armin
author Ardalan Armin
author2 Oskar J. Sandberg
Ardalan Armin
format Journal article
container_title Synthetic Metals
container_volume 254
container_start_page 114
publishDate 2019
institution Swansea University
issn 03796779
doi_str_mv 10.1016/j.synthmet.2019.06.008
college_str College of Science
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hierarchy_top_title College of Science
hierarchy_parent_id collegeofscience
hierarchy_parent_title College of Science
department_str Physics{{{_:::_}}}College of Science{{{_:::_}}}Physics
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description Radiative and non-radiative charge carrier recombination in thin-film diodes plays a key role in determining the efficiency of electronic devices made of next generation semiconductors such as organic, perovskite and nanocrystals. In this work, we show that lowering the bulk recombination does not necessarily result in enhanced performance metrics of electronic devices. From the perspective of charge carrier extraction and injection, the radiative limit of the open-circuit voltage of solar cells, noise current of photodetectors and lasing threshold of injection lasers cannot be improved if the contacts are not perfectly selective. A numerical drift-diffusion model is used to investigate the interplay between bulk recombination and surface recombination of minority carriers at the contacts in bipolar thin diode devices based on low-mobility semiconductors. The surface recombination becomes prominent in case of reduced bulk recombination strengths when non-selective contacts, i. e. contacts that are either metallic or have imperfect charge-selective interlayer, are employed. Finally, we derive analytical approximations for the case when diffusion-limited surface recombination of minority carriers at Ohmic contacts dominates the dark current. These results indicate that having perfectly selective contacts becomes crucial in systems with suppressed bulk recombination – a challenging requirement for future state-of-the-art thin-film solar cells, light-emitting devices and photodetectors made of next generation semiconductors.
published_date 2019-08-31T04:04:14Z
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