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CMOS-Process Compatible Embedded Sensors for Power Electronics Devices / Stephen Batcup

Swansea University Author: Stephen Batcup

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DOI (Published version): 10.23889/Suthesis.51430

Abstract

In this thesis, sensors are described whose fabrication processes are compatible with standard CMOS silicon processes. These sensors are then able to be integrated onto conventional silicon power devices with ease. The sensors are intended to form part of a larger control system for performance moni...

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Published: 2019
Institution: Swansea University
Degree level: Doctoral
Degree name: Ph.D
URI: https://cronfa.swan.ac.uk/Record/cronfa51430
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first_indexed 2019-08-15T21:29:50Z
last_indexed 2019-10-21T16:57:28Z
id cronfa51430
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spelling 2019-08-16T11:03:37.1981042 v2 51430 2019-08-15 CMOS-Process Compatible Embedded Sensors for Power Electronics Devices eceb39617dc6d345c65980a41f64c618 NULL Stephen Batcup Stephen Batcup true true 2019-08-15 In this thesis, sensors are described whose fabrication processes are compatible with standard CMOS silicon processes. These sensors are then able to be integrated onto conventional silicon power devices with ease. The sensors are intended to form part of a larger control system for performance monitoring and protection of the power devices they’re integrated with and, because the power devices and sensors are intimately coupled, the control and monitoring can be very closely associated to the individual power devices being supervised. Two types of sensor are investigated in this work 1) Temperature sensors, which utilise the temperature-dependency of existing structures within the power semiconductor device to determine the on-chip temperature and 2) Magnetic sensors which are intended to be fabricated adjacent to current-carrying conductors on the power device and act as current-sensors by detecting the intensity of the magnetic field generated by the device current. The investigation into temperature sensors focusses mainly on their usefulness in characterising the thermal structure of the power device and creating thermal models which represent this structure. A full electro-thermal model for the device could then be constructed by combining the isothermal electrical device model with the derived thermal model. This work also investigates the thermal behaviour of individual structural elements within the device construction by direct comparison of similarly constructed devices and isolating the thermal effects of structural differences. A similar technique is employed to investigate the thermal effects of environmental conditions. A full description of the measurement system required, and the techniques employed, to perform this investigation is given in Chapter 3 and the experimental analysis is given in Chapter 4. Two variations of magnetic sensor are investigated. The first is a split-drain LD MagFET which is characterised for relative current sensitivity and found to be comparable with the highest reported for this type of sensor. This sensor is described and characterised in Chapter 5. The second is a novel 4-terminal magnetic sensor, whose relative current sensitivity is found to be several orders of magnitude higher than that of the highest reported split-drain MagFET. This device, together with an analysis of degradation due to imperfect processing, is characterised in Chapter 6. E-Thesis 31 12 2019 2019-12-31 10.23889/Suthesis.51430 Due to Embargo and/or Third Party Copyright restrictions, this thesis is not available via this service. COLLEGE NANME Engineering COLLEGE CODE Swansea University Doctoral Ph.D 2019-08-16T11:03:37.1981042 2019-08-15T18:41:35.7120296 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Stephen Batcup NULL 1 Stephen Batcup 2
title CMOS-Process Compatible Embedded Sensors for Power Electronics Devices
spellingShingle CMOS-Process Compatible Embedded Sensors for Power Electronics Devices
Stephen Batcup
title_short CMOS-Process Compatible Embedded Sensors for Power Electronics Devices
title_full CMOS-Process Compatible Embedded Sensors for Power Electronics Devices
title_fullStr CMOS-Process Compatible Embedded Sensors for Power Electronics Devices
title_full_unstemmed CMOS-Process Compatible Embedded Sensors for Power Electronics Devices
title_sort CMOS-Process Compatible Embedded Sensors for Power Electronics Devices
author_id_str_mv eceb39617dc6d345c65980a41f64c618
author_id_fullname_str_mv eceb39617dc6d345c65980a41f64c618_***_Stephen Batcup
author Stephen Batcup
author2 Stephen Batcup
Stephen Batcup
format E-Thesis
publishDate 2019
institution Swansea University
doi_str_mv 10.23889/Suthesis.51430
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
document_store_str 0
active_str 0
description In this thesis, sensors are described whose fabrication processes are compatible with standard CMOS silicon processes. These sensors are then able to be integrated onto conventional silicon power devices with ease. The sensors are intended to form part of a larger control system for performance monitoring and protection of the power devices they’re integrated with and, because the power devices and sensors are intimately coupled, the control and monitoring can be very closely associated to the individual power devices being supervised. Two types of sensor are investigated in this work 1) Temperature sensors, which utilise the temperature-dependency of existing structures within the power semiconductor device to determine the on-chip temperature and 2) Magnetic sensors which are intended to be fabricated adjacent to current-carrying conductors on the power device and act as current-sensors by detecting the intensity of the magnetic field generated by the device current. The investigation into temperature sensors focusses mainly on their usefulness in characterising the thermal structure of the power device and creating thermal models which represent this structure. A full electro-thermal model for the device could then be constructed by combining the isothermal electrical device model with the derived thermal model. This work also investigates the thermal behaviour of individual structural elements within the device construction by direct comparison of similarly constructed devices and isolating the thermal effects of structural differences. A similar technique is employed to investigate the thermal effects of environmental conditions. A full description of the measurement system required, and the techniques employed, to perform this investigation is given in Chapter 3 and the experimental analysis is given in Chapter 4. Two variations of magnetic sensor are investigated. The first is a split-drain LD MagFET which is characterised for relative current sensitivity and found to be comparable with the highest reported for this type of sensor. This sensor is described and characterised in Chapter 5. The second is a novel 4-terminal magnetic sensor, whose relative current sensitivity is found to be several orders of magnitude higher than that of the highest reported split-drain MagFET. This device, together with an analysis of degradation due to imperfect processing, is characterised in Chapter 6.
published_date 2019-12-31T04:03:18Z
_version_ 1763753274662453248
score 11.036684

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