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Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology / Petar Igic; Nebojsa Jankovic; Jon Evans; Matthew Elwin; Stephen Batcup; Soroush Faramehr

IEEE Electron Device Letters, Volume: 39, Issue: 5, Pages: 746 - 748

Swansea University Author: Igic, Petar

Abstract

This letter presents first–ever fabricated GaN split-current magnetic sensor device. This is the key technology needed to fully unlock the potential of GaN power technology. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 %...

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Published in: IEEE Electron Device Letters
ISSN: 0741-3106 1558-0563
Published: 2018
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa39145
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Abstract: This letter presents first–ever fabricated GaN split-current magnetic sensor device. This is the key technology needed to fully unlock the potential of GaN power technology. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 % T-1 for wide mT range of the magnetic field. The constant sensitivity of a fabricated sensor can be attributed to device’s 2DEG nature, i.e. its high electron concentration and mobility, and very small layer thickness.
College: College of Engineering
Issue: 5
Start Page: 746
End Page: 748