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High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible with SOI FinFET Technology / Nebojsa Jankovic; Olga Kryvchenkova; Steve Batcup; Petar Igic

IEEE Electron Device Letters, Volume: 38, Issue: 6, Pages: 1 - 1

Swansea University Author: Igic, Petar

Abstract

This letter presents a novel device concept of splitcurrent magnetic sensor that is fully compatible with SOI FinFET technology. The fabricated dual-gate four-terminal device brings a step change in SOI integrated sensor capabilities, its measured current related relative sensitivity is as high as 3...

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Published in: IEEE Electron Device Letters
ISSN: 0741-3106 1558-0563
Published: 2017
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa33209
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Abstract: This letter presents a novel device concept of splitcurrent magnetic sensor that is fully compatible with SOI FinFET technology. The fabricated dual-gate four-terminal device brings a step change in SOI integrated sensor capabilities, its measured current related relative sensitivity is as high as 3400 % T-1 at 2 μA of total supply current. The device’s very high sensitivity is attributed to its novel current conduction phenomena and the internal magnetic deflection enhancement loop demonstrated using 3D TCAD numerical simulations. This new magnetic sensor is a very promising candidate for the next generation of magnetic sensitive smartpower integrated circuits.
Keywords: SOI, FinFET, magnetic sensor, split-current, dual gate, IC
College: College of Engineering
Issue: 6
Start Page: 1
End Page: 1