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High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible with SOI FinFET Technology

Nebojsa Jankovic, Olga Kryvchenkova, Steve Batcup, Petar Igic Orcid Logo

IEEE Electron Device Letters, Volume: 38, Issue: 6, Pages: 1 - 1

Swansea University Author: Petar Igic Orcid Logo

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Abstract

This letter presents a unique device concept of split-current magnetic sensor that is fully compatible with SOI FinFET technology. The fabricated dual-gate four-terminal device brings a step change in SOI integrated sensor capabilities, its measured current related relative sensitivity is as high as...

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Published in: IEEE Electron Device Letters
ISSN: 0741-3106 1558-0563
Published: 2017
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa33209
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Abstract: This letter presents a unique device concept of split-current magnetic sensor that is fully compatible with SOI FinFET technology. The fabricated dual-gate four-terminal device brings a step change in SOI integrated sensor capabilities, its measured current related relative sensitivity is as high as 3400 % T-1 at 2 μA of total supply current, comparing to the sensitivity of 3%T-1 exhibited by commercially available silicon MagFETSs. The device’s very high sensitivity is attributed to its novel current conduction phenomena and the internal magnetic deflection enhancement loop demonstrated using 3D TCAD numerical simulations. This new magnetic sensor is a very promising candidate for the next generation of magnetic sensitive smart-power integrated circuits.
Keywords: SOI, FinFET, magnetic sensor, split-current, dual gate, IC
College: Faculty of Science and Engineering
Issue: 6
Start Page: 1
End Page: 1