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3-D Finite Element Monte Carlo Simulations of Scaled Si SOI FinFET With Different Cross Sections / Daniel Nagy, Muhammad A. Elmessary, Manuel Aldegunde, Raul Valin, Antonio Martinez, Jari Lindberg, Wulf Dettmer, Djordje Peric, Antonio J. Garcia-Loureiro, Karol Kalna, Antonio Martinez Muniz
IEEE Transactions on Nanotechnology, Volume: 14, Issue: 1, Pages: 93 - 100
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Si SOI FinFETs with gate lengths of 12.8 nm and 10.7 nm are modelled using 3D Finite Element Monte Carlo (MC) simulations with 2D Schroedinger equation quantum corrections. These non-planar transistors are studied for two cross-sections: rectangular-like and triangular-like, and for two channel orie...
|Published in:||IEEE Transactions on Nanotechnology|
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Si SOI FinFETs with gate lengths of 12.8 nm and 10.7 nm are modelled using 3D Finite Element Monte Carlo (MC) simulations with 2D Schroedinger equation quantum corrections. These non-planar transistors are studied for two cross-sections: rectangular-like and triangular-like, and for two channel orientations: h100i and h110i. The 10.7 nm gate length rectangular-like FinFET is also simulated using the 3D Non-Equilibrium Green’s Functions (NEGF) technique and the results are compared with MC simulations. The 12.8 nm and 10.7 nm gate length rectangular-like FinFETs give larger drive currents per perimeter by about 25−27% than the triangular-like shaped but are outperformed by the triangular-like ones when normalised by channel area. The devices with a <100> channel orientation deliver a larger drive current by about 11% than their counterparts with a h110i channel when scaled to 12.8 nm and to 10.7 nm gate lengths. ID–VG characteristics at low and high drain biases obtained from the 3D NEGF simulations show a remarkable agreement with the MC results and overestimate the drain current from a gate bias of 0.5 V only due to exclusion of the interface roughness and ionized impurity scatterings.
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