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Quantum Corrections Based on the 2-D Schroedinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs / Wulf, Dettmer; Karol, Kalna; Djordje, Peric

IEEE Transactions on Electron Devices, Volume: 61, Issue: 2, Pages: 423 - 429

Swansesa University Authors: Wulf, Dettmer, Karol, Kalna, Djordje, Peric

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DOI (Published version): 10.1109/TED.2013.2296209

Abstract

Solutions of the 2-D Schrödinger equation across the channel using a finite element method have been implemented into a 3-D finite element (FE) ensemble Monte Carlo (MC) device simulation toolbox as quantum corrections. The 2-D FE Schrödinger equation-based quantum corrections are entirely calibrati...

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Published in: IEEE Transactions on Electron Devices
Published: 2014
URI: https://cronfa.swan.ac.uk/Record/cronfa21451
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Abstract: Solutions of the 2-D Schrödinger equation across the channel using a finite element method have been implemented into a 3-D finite element (FE) ensemble Monte Carlo (MC) device simulation toolbox as quantum corrections. The 2-D FE Schrödinger equation-based quantum corrections are entirely calibration free and can accurately describe quantum confinement effects in arbitrary device cross sections. The 3-D FE quantum corrected MC simulation is based on the tetrahedral decomposition of the simulation domain and the 2-D Schrödinger equation is solved at prescribed transverse planes of the 3-D mesh in the transport direction. We apply the method to study output characteristics of a nonplanar nanoscaled MOSFET, a{10.7}-nm gate length silicon-on-insulator FinFET, investigating 〈100〉 and 〈110〉 channel orientations. The results are then compared with those obtained from 3-D FE MC simulations with quantum corrections via the density gradient method showing very similar I-V characteristics but very different density distributions.
Issue: 2
Start Page: 423
End Page: 429