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Quantum Corrections Based on the 2-D Schroedinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs

Jari Lindberg, Manuel Aldegunde, Daniel Nagy, Wulf Dettmer Orcid Logo, Karol Kalna Orcid Logo, Antonio Jesus Garcia-Loureiro, Djordje Peric Orcid Logo

IEEE Transactions on Electron Devices, Volume: 61, Issue: 2, Pages: 423 - 429

Swansea University Authors: Wulf Dettmer Orcid Logo, Karol Kalna Orcid Logo, Djordje Peric Orcid Logo

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DOI (Published version): 10.1109/TED.2013.2296209

Abstract

Solutions of the 2-D Schrödinger equation across the channel using a finite element method have been implemented into a 3-D finite element (FE) ensemble Monte Carlo (MC) device simulation toolbox as quantum corrections. The 2-D FE Schrödinger equation-based quantum corrections are entirely calibrati...

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: 2014
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URI: https://cronfa.swan.ac.uk/Record/cronfa21451
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spelling 2021-01-13T14:55:55.4829742 v2 21451 2015-05-16 Quantum Corrections Based on the 2-D Schroedinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs 30bb53ad906e7160e947fa01c16abf55 0000-0003-0799-4645 Wulf Dettmer Wulf Dettmer true false 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 9d35cb799b2542ad39140943a9a9da65 0000-0002-1112-301X Djordje Peric Djordje Peric true false 2015-05-16 AERO Solutions of the 2-D Schrödinger equation across the channel using a finite element method have been implemented into a 3-D finite element (FE) ensemble Monte Carlo (MC) device simulation toolbox as quantum corrections. The 2-D FE Schrödinger equation-based quantum corrections are entirely calibration free and can accurately describe quantum confinement effects in arbitrary device cross sections. The 3-D FE quantum corrected MC simulation is based on the tetrahedral decomposition of the simulation domain and the 2-D Schrödinger equation is solved at prescribed transverse planes of the 3-D mesh in the transport direction. We apply the method to study output characteristics of a nonplanar nanoscaled MOSFET, a{10.7}-nm gate length silicon-on-insulator FinFET, investigating 〈100〉 and 〈110〉 channel orientations. The results are then compared with those obtained from 3-D FE MC simulations with quantum corrections via the density gradient method showing very similar I-V characteristics but very different density distributions. Journal Article IEEE Transactions on Electron Devices 61 2 423 429 0018-9383 1557-9646 28 2 2014 2014-02-28 10.1109/TED.2013.2296209 COLLEGE NANME Aerospace Engineering COLLEGE CODE AERO Swansea University 2021-01-13T14:55:55.4829742 2015-05-16T08:23:33.3616470 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Civil Engineering Jari Lindberg 1 Manuel Aldegunde 2 Daniel Nagy 3 Wulf Dettmer 0000-0003-0799-4645 4 Karol Kalna 0000-0002-6333-9189 5 Antonio Jesus Garcia-Loureiro 6 Djordje Peric 0000-0002-1112-301X 7
title Quantum Corrections Based on the 2-D Schroedinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs
spellingShingle Quantum Corrections Based on the 2-D Schroedinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs
Wulf Dettmer
Karol Kalna
Djordje Peric
title_short Quantum Corrections Based on the 2-D Schroedinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs
title_full Quantum Corrections Based on the 2-D Schroedinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs
title_fullStr Quantum Corrections Based on the 2-D Schroedinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs
title_full_unstemmed Quantum Corrections Based on the 2-D Schroedinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs
title_sort Quantum Corrections Based on the 2-D Schroedinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs
author_id_str_mv 30bb53ad906e7160e947fa01c16abf55
1329a42020e44fdd13de2f20d5143253
9d35cb799b2542ad39140943a9a9da65
author_id_fullname_str_mv 30bb53ad906e7160e947fa01c16abf55_***_Wulf Dettmer
1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
9d35cb799b2542ad39140943a9a9da65_***_Djordje Peric
author Wulf Dettmer
Karol Kalna
Djordje Peric
author2 Jari Lindberg
Manuel Aldegunde
Daniel Nagy
Wulf Dettmer
Karol Kalna
Antonio Jesus Garcia-Loureiro
Djordje Peric
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 61
container_issue 2
container_start_page 423
publishDate 2014
institution Swansea University
issn 0018-9383
1557-9646
doi_str_mv 10.1109/TED.2013.2296209
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Civil Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Civil Engineering
document_store_str 0
active_str 0
description Solutions of the 2-D Schrödinger equation across the channel using a finite element method have been implemented into a 3-D finite element (FE) ensemble Monte Carlo (MC) device simulation toolbox as quantum corrections. The 2-D FE Schrödinger equation-based quantum corrections are entirely calibration free and can accurately describe quantum confinement effects in arbitrary device cross sections. The 3-D FE quantum corrected MC simulation is based on the tetrahedral decomposition of the simulation domain and the 2-D Schrödinger equation is solved at prescribed transverse planes of the 3-D mesh in the transport direction. We apply the method to study output characteristics of a nonplanar nanoscaled MOSFET, a{10.7}-nm gate length silicon-on-insulator FinFET, investigating 〈100〉 and 〈110〉 channel orientations. The results are then compared with those obtained from 3-D FE MC simulations with quantum corrections via the density gradient method showing very similar I-V characteristics but very different density distributions.
published_date 2014-02-28T03:25:27Z
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score 10.998093

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