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Quantum Corrections Based on the 2-D Schroedinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs / Jari Lindberg, Manuel Aldegunde, Daniel Nagy, Wulf Dettmer, Karol Kalna, Antonio Jesus Garcia-Loureiro, Djordje Peric

IEEE Transactions on Electron Devices, Volume: 61, Issue: 2, Pages: 423 - 429

Swansea University Authors: Wulf Dettmer, Karol Kalna, Djordje Peric

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Abstract

Solutions of the 2-D Schrödinger equation across the channel using a finite element method have been implemented into a 3-D finite element (FE) ensemble Monte Carlo (MC) device simulation toolbox as quantum corrections. The 2-D FE Schrödinger equation-based quantum corrections are entirely calibrati...

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: 2014
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa21451
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Abstract: Solutions of the 2-D Schrödinger equation across the channel using a finite element method have been implemented into a 3-D finite element (FE) ensemble Monte Carlo (MC) device simulation toolbox as quantum corrections. The 2-D FE Schrödinger equation-based quantum corrections are entirely calibration free and can accurately describe quantum confinement effects in arbitrary device cross sections. The 3-D FE quantum corrected MC simulation is based on the tetrahedral decomposition of the simulation domain and the 2-D Schrödinger equation is solved at prescribed transverse planes of the 3-D mesh in the transport direction. We apply the method to study output characteristics of a nonplanar nanoscaled MOSFET, a{10.7}-nm gate length silicon-on-insulator FinFET, investigating 〈100〉 and 〈110〉 channel orientations. The results are then compared with those obtained from 3-D FE MC simulations with quantum corrections via the density gradient method showing very similar I-V characteristics but very different density distributions.
College: College of Engineering
Issue: 2
Start Page: 423
End Page: 429