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High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible with SOI FinFET Technology

Nebojsa Jankovic, Olga Kryvchenkova, Steve Batcup, Petar Igic Orcid Logo

IEEE Electron Device Letters, Volume: 38, Issue: 6, Pages: 1 - 1

Swansea University Author: Petar Igic Orcid Logo

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DOI (Published version): 10.1109/LED.2017.2693559

Abstract

This letter presents a unique device concept of split-current magnetic sensor that is fully compatible with SOI FinFET technology. The fabricated dual-gate four-terminal device brings a step change in SOI integrated sensor capabilities, its measured current related relative sensitivity is as high as...

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Published in: IEEE Electron Device Letters
ISSN: 0741-3106 1558-0563
Published: 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa33209
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spelling 2020-06-24T10:25:07.0697189 v2 33209 2017-05-05 High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible with SOI FinFET Technology e085acc259a367abc89338346a150186 0000-0001-8150-8815 Petar Igic Petar Igic true false 2017-05-05 EEN This letter presents a unique device concept of split-current magnetic sensor that is fully compatible with SOI FinFET technology. The fabricated dual-gate four-terminal device brings a step change in SOI integrated sensor capabilities, its measured current related relative sensitivity is as high as 3400 % T-1 at 2 μA of total supply current, comparing to the sensitivity of 3%T-1 exhibited by commercially available silicon MagFETSs. The device’s very high sensitivity is attributed to its novel current conduction phenomena and the internal magnetic deflection enhancement loop demonstrated using 3D TCAD numerical simulations. This new magnetic sensor is a very promising candidate for the next generation of magnetic sensitive smart-power integrated circuits. Journal Article IEEE Electron Device Letters 38 6 1 1 0741-3106 1558-0563 SOI, FinFET, magnetic sensor, split-current, dual gate, IC 30 6 2017 2017-06-30 10.1109/LED.2017.2693559 COLLEGE NANME Engineering COLLEGE CODE EEN Swansea University RCUK, EP/K035304/1 2020-06-24T10:25:07.0697189 2017-05-05T10:55:14.9068222 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Nebojsa Jankovic 1 Olga Kryvchenkova 2 Steve Batcup 3 Petar Igic 0000-0001-8150-8815 4 0033209-02062017110219.pdf jankovic2017.pdf 2017-06-02T11:02:19.1600000 Output 745523 application/pdf Version of Record true 2017-06-02T00:00:00.0000000 This article is made available with a Creative Commons Attribution 4.0 International Licence (CC BY 4.0) true eng https://creativecommons.org/licenses/by/4.0/
title High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible with SOI FinFET Technology
spellingShingle High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible with SOI FinFET Technology
Petar Igic
title_short High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible with SOI FinFET Technology
title_full High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible with SOI FinFET Technology
title_fullStr High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible with SOI FinFET Technology
title_full_unstemmed High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible with SOI FinFET Technology
title_sort High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible with SOI FinFET Technology
author_id_str_mv e085acc259a367abc89338346a150186
author_id_fullname_str_mv e085acc259a367abc89338346a150186_***_Petar Igic
author Petar Igic
author2 Nebojsa Jankovic
Olga Kryvchenkova
Steve Batcup
Petar Igic
format Journal article
container_title IEEE Electron Device Letters
container_volume 38
container_issue 6
container_start_page 1
publishDate 2017
institution Swansea University
issn 0741-3106
1558-0563
doi_str_mv 10.1109/LED.2017.2693559
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
document_store_str 1
active_str 0
description This letter presents a unique device concept of split-current magnetic sensor that is fully compatible with SOI FinFET technology. The fabricated dual-gate four-terminal device brings a step change in SOI integrated sensor capabilities, its measured current related relative sensitivity is as high as 3400 % T-1 at 2 μA of total supply current, comparing to the sensitivity of 3%T-1 exhibited by commercially available silicon MagFETSs. The device’s very high sensitivity is attributed to its novel current conduction phenomena and the internal magnetic deflection enhancement loop demonstrated using 3D TCAD numerical simulations. This new magnetic sensor is a very promising candidate for the next generation of magnetic sensitive smart-power integrated circuits.
published_date 2017-06-30T03:40:52Z
_version_ 1763751863169056768
score 11.036706

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