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High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible with SOI FinFET Technology
IEEE Electron Device Letters, Volume: 38, Issue: 6, Pages: 1 - 1
Swansea University Author:
Petar Igic
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DOI (Published version): 10.1109/LED.2017.2693559
Abstract
This letter presents a unique device concept of split-current magnetic sensor that is fully compatible with SOI FinFET technology. The fabricated dual-gate four-terminal device brings a step change in SOI integrated sensor capabilities, its measured current related relative sensitivity is as high as...
| Published in: | IEEE Electron Device Letters |
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| ISSN: | 0741-3106 1558-0563 |
| Published: |
2017
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa33209 |
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| Abstract: |
This letter presents a unique device concept of split-current magnetic sensor that is fully compatible with SOI FinFET technology. The fabricated dual-gate four-terminal device brings a step change in SOI integrated sensor capabilities, its measured current related relative sensitivity is as high as 3400 % T-1 at 2 μA of total supply current, comparing to the sensitivity of 3%T-1 exhibited by commercially available silicon MagFETSs. The device’s very high sensitivity is attributed to its novel current conduction phenomena and the internal magnetic deflection enhancement loop demonstrated using 3D TCAD numerical simulations. This new magnetic sensor is a very promising candidate for the next generation of magnetic sensitive smart-power integrated circuits. |
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| Keywords: |
SOI, FinFET, magnetic sensor, split-current, dual gate, IC |
| College: |
Faculty of Science and Engineering |
| Issue: |
6 |
| Start Page: |
1 |
| End Page: |
1 |