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Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology
Petar Igic 
,
Nebojsa Jankovic,
Jon Evans,
Matthew Elwin,
Stephen Batcup,
Soroush Faramehr
,
Nebojsa Jankovic,
Jon Evans,
Matthew Elwin,
Stephen Batcup,
Soroush Faramehr
IEEE Electron Device Letters, Volume: 39, Issue: 5, Pages: 746 - 748
Swansea University Author:
Petar Igic
-
PDF | Accepted Manuscript
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DOI (Published version): 10.1109/LED.2018.2816164
Abstract
This letter presents first–ever fabricated GaN split-current magnetic sensor device. This is the key technology needed to fully unlock the potential of GaN power technology. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 %...
| Published in: | IEEE Electron Device Letters |
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| ISSN: | 0741-3106 1558-0563 |
| Published: |
2018
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa39145 |
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| Abstract: |
This letter presents first–ever fabricated GaN split-current magnetic sensor device. This is the key technology needed to fully unlock the potential of GaN power technology. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 % T-1 for wide mT range of the magnetic field. The constant sensitivity of a fabricated sensor can be attributed to device’s 2DEG nature, i.e. its high electron concentration and mobility, and very small layer thickness. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
5 |
| Start Page: |
746 |
| End Page: |
748 |