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Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application / Petar, Igic; Karol, Kalna

Semiconductor Science and Technology, Volume: 29, Issue: 2, Start page: 025007

Swansesa University Authors: Petar, Igic, Karol, Kalna

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DOI (Published version): 10.1088/0268-1242/29/2/025007

Published in: Semiconductor Science and Technology
Published: 2014
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College: College of Engineering
Issue: 2
Start Page: 025007