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Journal article 792 views

Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications

Soroush Faramehr, Karol Kalna Orcid Logo, Petar Igić, Petar Igic Orcid Logo

Semiconductor Science and Technology, Volume: 29, Issue: 11, Start page: 115020

Swansea University Authors: Karol Kalna Orcid Logo, Petar Igic Orcid Logo

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DOI (Published version): 10.1088/0268-1242/29/11/115020

Published in: Semiconductor Science and Technology
Published: 2014
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College: College of Engineering
Issue: 11
Start Page: 115020