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Analysis of GaN HEMTs Switching Transients Using Compact Model / Soroush Faramehr; Petar Igic

IEEE Transactions on Electron Devices, Volume: 64, Issue: 7, Pages: 2900 - 2905

Swansea University Author: Igic, Petar

Abstract

The methodology to model GaN power HEMT switching transients at the circuit level is presented in this paper. A compact model to predict devices’ pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching...

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: 2017
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa34411
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Abstract: The methodology to model GaN power HEMT switching transients at the circuit level is presented in this paper. A compact model to predict devices’ pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching tester to model intrinsic parasitic effects and to analyze power dissipation of GaN power HEMT are proposed and presented. Switching transient including gate-lag and drain-lag is predicted for ideal (without trap) and nonideal (with trap) devices. The results are validated by and compared to 2-D finite-element TCAD simulations. The developed methodology and compact model can successfully predict the dynamic behaviour of single and multiple power GaN HEMTs used for power electronics design.
College: College of Engineering
Issue: 7
Start Page: 2900
End Page: 2905