Journal article 1055 views 383 downloads
Analysis of GaN HEMTs Switching Transients Using Compact Model
Soroush Faramehr,
Petar Igic 
IEEE Transactions on Electron Devices, Volume: 64, Issue: 7, Pages: 2900 - 2905
Swansea University Author:
Petar Igic
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DOI (Published version): 10.1109/TED.2017.2703103
Abstract
The methodology to model GaN power HEMT switching transients at the circuit level is presented in this paper. A compact model to predict devices’ pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching...
| Published in: | IEEE Transactions on Electron Devices |
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| ISSN: | 0018-9383 1557-9646 |
| Published: |
2017
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa34411 |
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| Abstract: |
The methodology to model GaN power HEMT switching transients at the circuit level is presented in this paper. A compact model to predict devices’ pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching tester to model intrinsic parasitic effects and to analyze power dissipation of GaN power HEMT are proposed and presented. Switching transient including gate-lag and drain-lag is predicted for ideal (without trap) and nonideal (with trap) devices. The results are validated by and compared to 2-D finite-element TCAD simulations. The developed methodology and compact model can successfully predict the dynamic behaviour of single and multiple power GaN HEMTs used for power electronics design. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
7 |
| Start Page: |
2900 |
| End Page: |
2905 |