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Analysis of GaN HEMTs Switching Transients Using Compact Model
IEEE Transactions on Electron Devices, Volume: 64, Issue: 7, Pages: 2900 - 2905
Swansea University Author: Petar Igic
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DOI (Published version): 10.1109/TED.2017.2703103
Abstract
The methodology to model GaN power HEMT switching transients at the circuit level is presented in this paper. A compact model to predict devices’ pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching...
Published in: | IEEE Transactions on Electron Devices |
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ISSN: | 0018-9383 1557-9646 |
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2017
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URI: | https://cronfa.swan.ac.uk/Record/cronfa34411 |
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2020-06-22T15:46:11.6792920 v2 34411 2017-06-21 Analysis of GaN HEMTs Switching Transients Using Compact Model e085acc259a367abc89338346a150186 0000-0001-8150-8815 Petar Igic Petar Igic true false 2017-06-21 EEN The methodology to model GaN power HEMT switching transients at the circuit level is presented in this paper. A compact model to predict devices’ pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching tester to model intrinsic parasitic effects and to analyze power dissipation of GaN power HEMT are proposed and presented. Switching transient including gate-lag and drain-lag is predicted for ideal (without trap) and nonideal (with trap) devices. The results are validated by and compared to 2-D finite-element TCAD simulations. The developed methodology and compact model can successfully predict the dynamic behaviour of single and multiple power GaN HEMTs used for power electronics design. Journal Article IEEE Transactions on Electron Devices 64 7 2900 2905 0018-9383 1557-9646 31 7 2017 2017-07-31 10.1109/TED.2017.2703103 COLLEGE NANME Engineering COLLEGE CODE EEN Swansea University 2020-06-22T15:46:11.6792920 2017-06-21T09:42:57.3758150 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Soroush Faramehr 1 Petar Igic 0000-0001-8150-8815 2 0034411-21062017094540.pdf faramehr2017.pdf 2017-06-21T09:45:40.2730000 Output 896439 application/pdf Version of Record true 2017-06-21T00:00:00.0000000 true eng |
title |
Analysis of GaN HEMTs Switching Transients Using Compact Model |
spellingShingle |
Analysis of GaN HEMTs Switching Transients Using Compact Model Petar Igic |
title_short |
Analysis of GaN HEMTs Switching Transients Using Compact Model |
title_full |
Analysis of GaN HEMTs Switching Transients Using Compact Model |
title_fullStr |
Analysis of GaN HEMTs Switching Transients Using Compact Model |
title_full_unstemmed |
Analysis of GaN HEMTs Switching Transients Using Compact Model |
title_sort |
Analysis of GaN HEMTs Switching Transients Using Compact Model |
author_id_str_mv |
e085acc259a367abc89338346a150186 |
author_id_fullname_str_mv |
e085acc259a367abc89338346a150186_***_Petar Igic |
author |
Petar Igic |
author2 |
Soroush Faramehr Petar Igic |
format |
Journal article |
container_title |
IEEE Transactions on Electron Devices |
container_volume |
64 |
container_issue |
7 |
container_start_page |
2900 |
publishDate |
2017 |
institution |
Swansea University |
issn |
0018-9383 1557-9646 |
doi_str_mv |
10.1109/TED.2017.2703103 |
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Faculty of Science and Engineering |
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facultyofscienceandengineering |
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Faculty of Science and Engineering |
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facultyofscienceandengineering |
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Faculty of Science and Engineering |
department_str |
School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised |
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description |
The methodology to model GaN power HEMT switching transients at the circuit level is presented in this paper. A compact model to predict devices’ pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching tester to model intrinsic parasitic effects and to analyze power dissipation of GaN power HEMT are proposed and presented. Switching transient including gate-lag and drain-lag is predicted for ideal (without trap) and nonideal (with trap) devices. The results are validated by and compared to 2-D finite-element TCAD simulations. The developed methodology and compact model can successfully predict the dynamic behaviour of single and multiple power GaN HEMTs used for power electronics design. |
published_date |
2017-07-31T03:42:41Z |
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1763751978083549184 |
score |
11.035349 |