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Analysis of GaN HEMTs Switching Transients Using Compact Model

Soroush Faramehr, Petar Igic Orcid Logo

IEEE Transactions on Electron Devices, Volume: 64, Issue: 7, Pages: 2900 - 2905

Swansea University Author: Petar Igic Orcid Logo

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DOI (Published version): 10.1109/TED.2017.2703103

Abstract

The methodology to model GaN power HEMT switching transients at the circuit level is presented in this paper. A compact model to predict devices’ pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching...

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa34411
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first_indexed 2017-06-21T14:16:50Z
last_indexed 2020-06-22T18:45:54Z
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spelling 2020-06-22T15:46:11.6792920 v2 34411 2017-06-21 Analysis of GaN HEMTs Switching Transients Using Compact Model e085acc259a367abc89338346a150186 0000-0001-8150-8815 Petar Igic Petar Igic true false 2017-06-21 EEN The methodology to model GaN power HEMT switching transients at the circuit level is presented in this paper. A compact model to predict devices’ pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching tester to model intrinsic parasitic effects and to analyze power dissipation of GaN power HEMT are proposed and presented. Switching transient including gate-lag and drain-lag is predicted for ideal (without trap) and nonideal (with trap) devices. The results are validated by and compared to 2-D finite-element TCAD simulations. The developed methodology and compact model can successfully predict the dynamic behaviour of single and multiple power GaN HEMTs used for power electronics design. Journal Article IEEE Transactions on Electron Devices 64 7 2900 2905 0018-9383 1557-9646 31 7 2017 2017-07-31 10.1109/TED.2017.2703103 COLLEGE NANME Engineering COLLEGE CODE EEN Swansea University 2020-06-22T15:46:11.6792920 2017-06-21T09:42:57.3758150 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Soroush Faramehr 1 Petar Igic 0000-0001-8150-8815 2 0034411-21062017094540.pdf faramehr2017.pdf 2017-06-21T09:45:40.2730000 Output 896439 application/pdf Version of Record true 2017-06-21T00:00:00.0000000 true eng
title Analysis of GaN HEMTs Switching Transients Using Compact Model
spellingShingle Analysis of GaN HEMTs Switching Transients Using Compact Model
Petar Igic
title_short Analysis of GaN HEMTs Switching Transients Using Compact Model
title_full Analysis of GaN HEMTs Switching Transients Using Compact Model
title_fullStr Analysis of GaN HEMTs Switching Transients Using Compact Model
title_full_unstemmed Analysis of GaN HEMTs Switching Transients Using Compact Model
title_sort Analysis of GaN HEMTs Switching Transients Using Compact Model
author_id_str_mv e085acc259a367abc89338346a150186
author_id_fullname_str_mv e085acc259a367abc89338346a150186_***_Petar Igic
author Petar Igic
author2 Soroush Faramehr
Petar Igic
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 64
container_issue 7
container_start_page 2900
publishDate 2017
institution Swansea University
issn 0018-9383
1557-9646
doi_str_mv 10.1109/TED.2017.2703103
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
document_store_str 1
active_str 0
description The methodology to model GaN power HEMT switching transients at the circuit level is presented in this paper. A compact model to predict devices’ pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching tester to model intrinsic parasitic effects and to analyze power dissipation of GaN power HEMT are proposed and presented. Switching transient including gate-lag and drain-lag is predicted for ideal (without trap) and nonideal (with trap) devices. The results are validated by and compared to 2-D finite-element TCAD simulations. The developed methodology and compact model can successfully predict the dynamic behaviour of single and multiple power GaN HEMTs used for power electronics design.
published_date 2017-07-31T03:42:41Z
_version_ 1763751978083549184
score 11.012678

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