No Cover Image

Journal article 1013 views

p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching

Tian Du, Weidong Xu, Matyas Daboczi, Jinhyun Kim, Shengda Xu, Chieh-Ting Lin, Hongkyu Kang, Kwanghee Lee, Martin J. Heeney, Ji-Seon Kim, James Durrant Orcid Logo, Martyn A. McLachlan

Journal of Materials Chemistry A, Volume: 7, Issue: 32, Pages: 18971 - 18979

Swansea University Author: James Durrant Orcid Logo

Full text not available from this repository: check for access using links below.

Check full text

DOI (Published version): 10.1039/C9TA03896E

Abstract

Doping is a widely implemented strategy for enhancing the inherent electronic properties of charge transport layers in photovoltaic (PV) devices. Here, in direct contrast to existing understanding, we find that a reduction in p-doping of the organic hole transport layer (HTL) leads to substantial im...

Full description

Published in: Journal of Materials Chemistry A
ISSN: 2050-7488 2050-7496
Published: 2019
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa51619
Tags: Add Tag
No Tags, Be the first to tag this record!
Abstract: Doping is a widely implemented strategy for enhancing the inherent electronic properties of charge transport layers in photovoltaic (PV) devices. Here, in direct contrast to existing understanding, we find that a reduction in p-doping of the organic hole transport layer (HTL) leads to substantial improvements in PV performance in planar p–i–n perovskite solar cells (PSCs), driven by improvements in open circuit voltage (VOC). Employing a range of transient and steady state characterisation tools, we find that the improvements of VOC correlate with reduced surface recombination losses in less p-doped HTLs. A simple device model including screening of bulk electric fields in the perovskite layer is used to explain this observation. In particular, photoluminescence (PL) emission of complete solar cells shows that efficient performance is correlated to a high PL intensity at open circuit and a low PL intensity at short circuit. We conclude that desirable transport layers for p–i–n PSCs should be charge selective contacts with low doping densities.
College: Faculty of Science and Engineering
Issue: 32
Start Page: 18971
End Page: 18979

Similar Items