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p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching

Tian Du, Weidong Xu, Matyas Daboczi, Jinhyun Kim, Shengda Xu, Chieh-Ting Lin, Hongkyu Kang, Kwanghee Lee, Martin J. Heeney, Ji-Seon Kim, James Durrant Orcid Logo, Martyn A. McLachlan

Journal of Materials Chemistry A, Volume: 7, Issue: 32, Pages: 18971 - 18979

Swansea University Author: James Durrant Orcid Logo

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DOI (Published version): 10.1039/C9TA03896E

Abstract

Doping is a widely implemented strategy for enhancing the inherent electronic properties of charge transport layers in photovoltaic (PV) devices. Here, in direct contrast to existing understanding, we find that a reduction in p-doping of the organic hole transport layer (HTL) leads to substantial im...

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Published in: Journal of Materials Chemistry A
ISSN: 2050-7488 2050-7496
Published: 2019
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URI: https://cronfa.swan.ac.uk/Record/cronfa51619
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first_indexed 2019-08-29T14:53:23Z
last_indexed 2019-10-11T14:23:24Z
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spelling 2019-10-11T12:13:06.5553247 v2 51619 2019-08-29 p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching f3dd64bc260e5c07adfa916c27dbd58a 0000-0001-8353-7345 James Durrant James Durrant true false 2019-08-29 MTLS Doping is a widely implemented strategy for enhancing the inherent electronic properties of charge transport layers in photovoltaic (PV) devices. Here, in direct contrast to existing understanding, we find that a reduction in p-doping of the organic hole transport layer (HTL) leads to substantial improvements in PV performance in planar p–i–n perovskite solar cells (PSCs), driven by improvements in open circuit voltage (VOC). Employing a range of transient and steady state characterisation tools, we find that the improvements of VOC correlate with reduced surface recombination losses in less p-doped HTLs. A simple device model including screening of bulk electric fields in the perovskite layer is used to explain this observation. In particular, photoluminescence (PL) emission of complete solar cells shows that efficient performance is correlated to a high PL intensity at open circuit and a low PL intensity at short circuit. We conclude that desirable transport layers for p–i–n PSCs should be charge selective contacts with low doping densities. Journal Article Journal of Materials Chemistry A 7 32 18971 18979 2050-7488 2050-7496 31 12 2019 2019-12-31 10.1039/C9TA03896E COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University 2019-10-11T12:13:06.5553247 2019-08-29T10:11:55.6029973 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering Tian Du 1 Weidong Xu 2 Matyas Daboczi 3 Jinhyun Kim 4 Shengda Xu 5 Chieh-Ting Lin 6 Hongkyu Kang 7 Kwanghee Lee 8 Martin J. Heeney 9 Ji-Seon Kim 10 James Durrant 0000-0001-8353-7345 11 Martyn A. McLachlan 12
title p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching
spellingShingle p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching
James Durrant
title_short p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching
title_full p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching
title_fullStr p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching
title_full_unstemmed p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching
title_sort p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching
author_id_str_mv f3dd64bc260e5c07adfa916c27dbd58a
author_id_fullname_str_mv f3dd64bc260e5c07adfa916c27dbd58a_***_James Durrant
author James Durrant
author2 Tian Du
Weidong Xu
Matyas Daboczi
Jinhyun Kim
Shengda Xu
Chieh-Ting Lin
Hongkyu Kang
Kwanghee Lee
Martin J. Heeney
Ji-Seon Kim
James Durrant
Martyn A. McLachlan
format Journal article
container_title Journal of Materials Chemistry A
container_volume 7
container_issue 32
container_start_page 18971
publishDate 2019
institution Swansea University
issn 2050-7488
2050-7496
doi_str_mv 10.1039/C9TA03896E
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering
document_store_str 0
active_str 0
description Doping is a widely implemented strategy for enhancing the inherent electronic properties of charge transport layers in photovoltaic (PV) devices. Here, in direct contrast to existing understanding, we find that a reduction in p-doping of the organic hole transport layer (HTL) leads to substantial improvements in PV performance in planar p–i–n perovskite solar cells (PSCs), driven by improvements in open circuit voltage (VOC). Employing a range of transient and steady state characterisation tools, we find that the improvements of VOC correlate with reduced surface recombination losses in less p-doped HTLs. A simple device model including screening of bulk electric fields in the perovskite layer is used to explain this observation. In particular, photoluminescence (PL) emission of complete solar cells shows that efficient performance is correlated to a high PL intensity at open circuit and a low PL intensity at short circuit. We conclude that desirable transport layers for p–i–n PSCs should be charge selective contacts with low doping densities.
published_date 2019-12-31T04:00:20Z
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score 10.930179