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Piezo-phototronic effect on quantum well terahertz photodetector for continuously modulating wavelength

Nian Liu, Gongwei Hu, Minjiang Dan, Ruhao Liu, Yaming Zhang, Lijie Li Orcid Logo, Yan Zhang

Nano Energy, Start page: 104091

Swansea University Author: Lijie Li Orcid Logo

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Abstract

Piezo-phototronic effect is unique for effectively controlling semiconductor and photonic properties by strain-induced piezoelectric field. In this work, we theoretically explore piezo-phototronic effect on intersubband optical absorption of wurtzite-structured AlGaN/GaN quantum well by self-consist...

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Published in: Nano Energy
ISSN: 2211-2855
Published: 2019
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa51704
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first_indexed 2019-09-06T04:44:10Z
last_indexed 2019-09-09T15:26:26Z
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2019-09-09T10:31:37.3178417</datestamp><bib-version>v2</bib-version><id>51704</id><entry>2019-09-05</entry><title>Piezo-phototronic effect on quantum well terahertz photodetector for continuously modulating wavelength</title><swanseaauthors><author><sid>ed2c658b77679a28e4c1dcf95af06bd6</sid><ORCID>0000-0003-4630-7692</ORCID><firstname>Lijie</firstname><surname>Li</surname><name>Lijie Li</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2019-09-05</date><deptcode>EEEG</deptcode><abstract>Piezo-phototronic effect is unique for effectively controlling semiconductor and photonic properties by strain-induced piezoelectric field. In this work, we theoretically explore piezo-phototronic effect on intersubband optical absorption of wurtzite-structured AlGaN/GaN quantum well by self-consistently solving eight-band kp Hamiltonian and Poisson equations. Intersubband transition is associated with the transition of two electronic states so it has longer wavelength due to lower transition energy. Strain can also effectively increase absorption wavelength in Al0.15Ga0.85N/GaN/Al0.05Ga0.95N quantum well by quantum Stark effect. For Al0.1Ga0.9N/GaN/Al0.05Ga0.95N quantum well, absorption wavelength decreases with increasing strain. Quantum efficiency can be sensitively controlled by strain. This study not only provides the theory models of piezo-phototronics of intersubband transition, but also offers the method for continuously controlling terahertz application by piezo-phototronic effect.</abstract><type>Journal Article</type><journal>Nano Energy</journal><paginationStart>104091</paginationStart><publisher/><issnPrint>2211-2855</issnPrint><keywords>Piezo-phototronic effect, GaN quantum well, Intersubband transition, Terahertz photodetector</keywords><publishedDay>3</publishedDay><publishedMonth>9</publishedMonth><publishedYear>2019</publishedYear><publishedDate>2019-09-03</publishedDate><doi>10.1016/j.nanoen.2019.104091</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2019-09-09T10:31:37.3178417</lastEdited><Created>2019-09-05T21:51:27.1821284</Created><authors><author><firstname>Nian</firstname><surname>Liu</surname><order>1</order></author><author><firstname>Gongwei</firstname><surname>Hu</surname><order>2</order></author><author><firstname>Minjiang</firstname><surname>Dan</surname><order>3</order></author><author><firstname>Ruhao</firstname><surname>Liu</surname><order>4</order></author><author><firstname>Yaming</firstname><surname>Zhang</surname><order>5</order></author><author><firstname>Lijie</firstname><surname>Li</surname><orcid>0000-0003-4630-7692</orcid><order>6</order></author><author><firstname>Yan</firstname><surname>Zhang</surname><order>7</order></author></authors><documents><document><filename>0051704-05092019215326.pdf</filename><originalFilename>1-s2.0-S2211285519307980-main.pdf</originalFilename><uploaded>2019-09-05T21:53:26.6070000</uploaded><type>Output</type><contentLength>1168800</contentLength><contentType>application/pdf</contentType><version>Accepted Manuscript</version><cronfaStatus>true</cronfaStatus><embargoDate>2020-09-03T00:00:00.0000000</embargoDate><documentNotes>&#xA9; 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/</documentNotes><copyrightCorrect>true</copyrightCorrect><language>eng</language></document></documents><OutputDurs/></rfc1807>
spelling 2019-09-09T10:31:37.3178417 v2 51704 2019-09-05 Piezo-phototronic effect on quantum well terahertz photodetector for continuously modulating wavelength ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2019-09-05 EEEG Piezo-phototronic effect is unique for effectively controlling semiconductor and photonic properties by strain-induced piezoelectric field. In this work, we theoretically explore piezo-phototronic effect on intersubband optical absorption of wurtzite-structured AlGaN/GaN quantum well by self-consistently solving eight-band kp Hamiltonian and Poisson equations. Intersubband transition is associated with the transition of two electronic states so it has longer wavelength due to lower transition energy. Strain can also effectively increase absorption wavelength in Al0.15Ga0.85N/GaN/Al0.05Ga0.95N quantum well by quantum Stark effect. For Al0.1Ga0.9N/GaN/Al0.05Ga0.95N quantum well, absorption wavelength decreases with increasing strain. Quantum efficiency can be sensitively controlled by strain. This study not only provides the theory models of piezo-phototronics of intersubband transition, but also offers the method for continuously controlling terahertz application by piezo-phototronic effect. Journal Article Nano Energy 104091 2211-2855 Piezo-phototronic effect, GaN quantum well, Intersubband transition, Terahertz photodetector 3 9 2019 2019-09-03 10.1016/j.nanoen.2019.104091 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2019-09-09T10:31:37.3178417 2019-09-05T21:51:27.1821284 Nian Liu 1 Gongwei Hu 2 Minjiang Dan 3 Ruhao Liu 4 Yaming Zhang 5 Lijie Li 0000-0003-4630-7692 6 Yan Zhang 7 0051704-05092019215326.pdf 1-s2.0-S2211285519307980-main.pdf 2019-09-05T21:53:26.6070000 Output 1168800 application/pdf Accepted Manuscript true 2020-09-03T00:00:00.0000000 © 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ true eng
title Piezo-phototronic effect on quantum well terahertz photodetector for continuously modulating wavelength
spellingShingle Piezo-phototronic effect on quantum well terahertz photodetector for continuously modulating wavelength
Lijie Li
title_short Piezo-phototronic effect on quantum well terahertz photodetector for continuously modulating wavelength
title_full Piezo-phototronic effect on quantum well terahertz photodetector for continuously modulating wavelength
title_fullStr Piezo-phototronic effect on quantum well terahertz photodetector for continuously modulating wavelength
title_full_unstemmed Piezo-phototronic effect on quantum well terahertz photodetector for continuously modulating wavelength
title_sort Piezo-phototronic effect on quantum well terahertz photodetector for continuously modulating wavelength
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Nian Liu
Gongwei Hu
Minjiang Dan
Ruhao Liu
Yaming Zhang
Lijie Li
Yan Zhang
format Journal article
container_title Nano Energy
container_start_page 104091
publishDate 2019
institution Swansea University
issn 2211-2855
doi_str_mv 10.1016/j.nanoen.2019.104091
document_store_str 1
active_str 0
description Piezo-phototronic effect is unique for effectively controlling semiconductor and photonic properties by strain-induced piezoelectric field. In this work, we theoretically explore piezo-phototronic effect on intersubband optical absorption of wurtzite-structured AlGaN/GaN quantum well by self-consistently solving eight-band kp Hamiltonian and Poisson equations. Intersubband transition is associated with the transition of two electronic states so it has longer wavelength due to lower transition energy. Strain can also effectively increase absorption wavelength in Al0.15Ga0.85N/GaN/Al0.05Ga0.95N quantum well by quantum Stark effect. For Al0.1Ga0.9N/GaN/Al0.05Ga0.95N quantum well, absorption wavelength decreases with increasing strain. Quantum efficiency can be sensitively controlled by strain. This study not only provides the theory models of piezo-phototronics of intersubband transition, but also offers the method for continuously controlling terahertz application by piezo-phototronic effect.
published_date 2019-09-03T04:03:42Z
_version_ 1763753300264484864
score 10.998116