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High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well
Minjiang Dan,
Gongwei Hu,
Jiaheng Nie,
Lijie Li 
,
Yan Zhang
,
Yan Zhang
Small, Volume: 17, Issue: 13, Start page: 2008106
Swansea University Author:
Lijie Li
-
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DOI (Published version): 10.1002/smll.202008106
Abstract
III‐nitride semiconductors play much more important roles in the areas of modern photoelectric applications, whereas strong polarization in their heterostructures is always a challenge to restrict the efficiency and performance of photoelectric devices. In this study, piezo‐phototronic effect on nea...
| Published in: | Small |
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| ISSN: | 1613-6810 1613-6829 |
| Published: |
Wiley
2021
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa56394 |
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| Abstract: |
III‐nitride semiconductors play much more important roles in the areas of modern photoelectric applications, whereas strong polarization in their heterostructures is always a challenge to restrict the efficiency and performance of photoelectric devices. In this study, piezo‐phototronic effect on near‐infrared intersubband absorption is explored based on polar GaN/AlN quantum wells. The results show that externally applied pressure leads to the redshift of absorption wavelength by reducing polarization field of the quantum well. The sensitivity to estimate pressure‐dependent intersubband absorption wavelength is almost two orders of magnitude higher than interband photoelectric devices. Additionally, such sensitivity is further enhanced by 2.6 times at 20 GPa as a result of piezo‐phototronic effect. This study paves avenue for designing high‐performance near‐infrared piezo‐phototronic devices based on intersubband transition. |
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| Keywords: |
GaN/AlN quantum well; intersubband transition; near‐infrared absorption; piezo‐phototronic effect |
| College: |
Faculty of Science and Engineering |
| Issue: |
13 |
| Start Page: |
2008106 |