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Dynamic model for piezotronic and piezo-phototronic devices under low and high frequency external compressive stresses (Featured)
Journal of Applied Physics, Volume: 123, Issue: 2, Start page: 025709
Swansea University Author: Lijie Li
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DOI (Published version): 10.1063/1.5009485
Abstract
In this work, we aim to establish a theoretical method for modelling the dynamic characteristics of piezotronics and piezo-phototronic devices. By taking the simplest piezotronic device, PN junction as an example, we combine the small signal model and the unified approach to investigate its diffusio...
Published in: | Journal of Applied Physics |
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ISSN: | 0021-8979 1089-7550 |
Published: |
2018
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Online Access: |
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URI: | https://cronfa.swan.ac.uk/Record/cronfa38078 |
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Abstract: |
In this work, we aim to establish a theoretical method for modelling the dynamic characteristics of piezotronics and piezo-phototronic devices. By taking the simplest piezotronic device, PN junction as an example, we combine the small signal model and the unified approach to investigate its diffusion capacitance and conductance when it is under both low and high frequency external compressive stresses. This approach is different from the traditional considerations that treat the piezopotential as a static value. Furthermore, we expand the theory into piezo-phototronic devices, e.g., a light emitting diode. The dynamic recombination rate and light emitting intensity are quantitatively calculated under different frequencies of external compressive stresses. |
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College: |
Faculty of Science and Engineering |
Issue: |
2 |
Start Page: |
025709 |