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Dynamic model for piezotronic and piezo-phototronic devices under low and high frequency external compressive stresses (Featured)

Leisheng Jin, Xiaohong Yan, Xiangfu Wang, Weijun Hu, Yan Zhang, Lijie Li Orcid Logo

Journal of Applied Physics, Volume: 123, Issue: 2, Start page: 025709

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.1063/1.5009485

Abstract

In this work, we aim to establish a theoretical method for modelling the dynamic characteristics of piezotronics and piezo-phototronic devices. By taking the simplest piezotronic device, PN junction as an example, we combine the small signal model and the unified approach to investigate its diffusio...

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Published in: Journal of Applied Physics
ISSN: 0021-8979 1089-7550
Published: 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa38078
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first_indexed 2018-01-12T20:10:10Z
last_indexed 2018-03-06T14:12:31Z
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spelling 2018-03-06T12:39:28.6093768 v2 38078 2018-01-12 Dynamic model for piezotronic and piezo-phototronic devices under low and high frequency external compressive stresses (Featured) ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2018-01-12 EEEG In this work, we aim to establish a theoretical method for modelling the dynamic characteristics of piezotronics and piezo-phototronic devices. By taking the simplest piezotronic device, PN junction as an example, we combine the small signal model and the unified approach to investigate its diffusion capacitance and conductance when it is under both low and high frequency external compressive stresses. This approach is different from the traditional considerations that treat the piezopotential as a static value. Furthermore, we expand the theory into piezo-phototronic devices, e.g., a light emitting diode. The dynamic recombination rate and light emitting intensity are quantitatively calculated under different frequencies of external compressive stresses. Journal Article Journal of Applied Physics 123 2 025709 0021-8979 1089-7550 12 1 2018 2018-01-12 10.1063/1.5009485 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2018-03-06T12:39:28.6093768 2018-01-12T18:00:19.5157663 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Leisheng Jin 1 Xiaohong Yan 2 Xiangfu Wang 3 Weijun Hu 4 Yan Zhang 5 Lijie Li 0000-0003-4630-7692 6 0038078-12012018210447.pdf pdf_archiveJAPIAUvol_123iss_2025709_1_am.pdf 2018-01-12T21:04:47.3200000 Output 1321586 application/pdf Accepted Manuscript true 2018-01-12T00:00:00.0000000 true eng
title Dynamic model for piezotronic and piezo-phototronic devices under low and high frequency external compressive stresses (Featured)
spellingShingle Dynamic model for piezotronic and piezo-phototronic devices under low and high frequency external compressive stresses (Featured)
Lijie Li
title_short Dynamic model for piezotronic and piezo-phototronic devices under low and high frequency external compressive stresses (Featured)
title_full Dynamic model for piezotronic and piezo-phototronic devices under low and high frequency external compressive stresses (Featured)
title_fullStr Dynamic model for piezotronic and piezo-phototronic devices under low and high frequency external compressive stresses (Featured)
title_full_unstemmed Dynamic model for piezotronic and piezo-phototronic devices under low and high frequency external compressive stresses (Featured)
title_sort Dynamic model for piezotronic and piezo-phototronic devices under low and high frequency external compressive stresses (Featured)
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Leisheng Jin
Xiaohong Yan
Xiangfu Wang
Weijun Hu
Yan Zhang
Lijie Li
format Journal article
container_title Journal of Applied Physics
container_volume 123
container_issue 2
container_start_page 025709
publishDate 2018
institution Swansea University
issn 0021-8979
1089-7550
doi_str_mv 10.1063/1.5009485
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description In this work, we aim to establish a theoretical method for modelling the dynamic characteristics of piezotronics and piezo-phototronic devices. By taking the simplest piezotronic device, PN junction as an example, we combine the small signal model and the unified approach to investigate its diffusion capacitance and conductance when it is under both low and high frequency external compressive stresses. This approach is different from the traditional considerations that treat the piezopotential as a static value. Furthermore, we expand the theory into piezo-phototronic devices, e.g., a light emitting diode. The dynamic recombination rate and light emitting intensity are quantitatively calculated under different frequencies of external compressive stresses.
published_date 2018-01-12T03:48:07Z
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score 11.035634

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