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Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes / A. Pérez-Tomás, E. Chikoidze, Y. Dumont, M.R. Jennings, S.O. Russell, P. Vales-Castro, G. Catalan, M. Lira-Cantú, C. Ton –That, F.H. Teherani, V.E. Sandana, P. Bove, D.J. Rogers, Mike Jennings

Materials Today Energy, Volume: 14, Start page: 100350

Swansea University Author: Mike Jennings

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Abstract

The use of ultra-wide bandgap transparent conducting beta gallium oxide (β-Ga2O3) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of t...

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Published in: Materials Today Energy
ISSN: 2468-6069
Published: 2019
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa52399
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Abstract: The use of ultra-wide bandgap transparent conducting beta gallium oxide (β-Ga2O3) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of them - transparent) which is not constrained by the Shockley–Queisser limit for open-circuit voltage (Voc) under typical indoor light. The solar blindness of the electrode enables a record-breaking bulk photovoltaic effect (BPE) with white light illumination (general use indoor light). This work opens up the perspective of ferroelectric photovoltaics which are not subject to the Shockley-Queisser limit by bringing into scene solar-blind conducting oxides.
Keywords: Ultra-wide bandgap semiconductors, Transparent conducting oxide, Gallium oxide, Ga2O3, Ferroelectric photovoltaics, Pb(Zr,Ti)O3, Bulk photovoltaic effect, Solar cell architecture
College: College of Engineering
Start Page: 100350