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Piezotronic spin and valley transistors based on monolayer MoS2

Ruhao Liu, Gongwei Hu, Minjiang Dan, Yaming Zhang, Lijie Li Orcid Logo, Yan Zhang

Nano Energy, Volume: 72, Start page: 104678

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.1016/j.nanoen.2020.104678

Abstract

Piezotronics and piezo-phototronics based on the third generation semiconductors are two novel fields for low power consumption, self-powered technology and internet of things. Strain-induced piezoelectric field plays a key role to modulate not only charge-carrier transport but also quantum transpor...

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Published in: Nano Energy
ISSN: 2211-2855 2211-3282
Published: Elsevier BV 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa53793
Abstract: Piezotronics and piezo-phototronics based on the third generation semiconductors are two novel fields for low power consumption, self-powered technology and internet of things. Strain-induced piezoelectric field plays a key role to modulate not only charge-carrier transport but also quantum transport properties in piezoelectric semiconductors, especially for two-dimensional materials which can withstand large strain. In this paper, we theoretically study piezotronic effect on the modulation of spin and valley properties in single-layered MoS2. Spin- and valley-dependent conductance, electronic density distribution and polarization ratio are investigated by quantum transport calculation. Because of piezotronic effect, strain-gated spin and valley transistors have excellent quantum state selectivity using by strain. Our work provides not only piezotronic effect on spin and valley quantum states, but also a guidance for designing novel quantum piezotronic devices.
Keywords: Piezotronics; Quantum transport; Monolayer MoS2
College: Faculty of Science and Engineering
Funders: The authors are thankful for the support from University of Electronic Science and Technology of China (ZYGX2015KYQD063), Swansea University, SPARC II project.
Start Page: 104678

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