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Piezotronic spin and valley transistors based on monolayer MoS2

Ruhao Liu, Gongwei Hu, Minjiang Dan, Yaming Zhang, Lijie Li Orcid Logo, Yan Zhang

Nano Energy, Volume: 72, Start page: 104678

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.1016/j.nanoen.2020.104678

Abstract

Piezotronics and piezo-phototronics based on the third generation semiconductors are two novel fields for low power consumption, self-powered technology and internet of things. Strain-induced piezoelectric field plays a key role to modulate not only charge-carrier transport but also quantum transpor...

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Published in: Nano Energy
ISSN: 2211-2855
Published: Elsevier BV 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa53793
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first_indexed 2020-03-10T04:29:17Z
last_indexed 2020-09-17T03:17:13Z
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spelling 2020-03-09T18:06:32.7555488 v2 53793 2020-03-09 Piezotronic spin and valley transistors based on monolayer MoS2 ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2020-03-09 EEEG Piezotronics and piezo-phototronics based on the third generation semiconductors are two novel fields for low power consumption, self-powered technology and internet of things. Strain-induced piezoelectric field plays a key role to modulate not only charge-carrier transport but also quantum transport properties in piezoelectric semiconductors, especially for two-dimensional materials which can withstand large strain. In this paper, we theoretically study piezotronic effect on the modulation of spin and valley properties in single-layered MoS2. Spin- and valley-dependent conductance, electronic density distribution and polarization ratio are investigated by quantum transport calculation. Because of piezotronic effect, strain-gated spin and valley transistors have excellent quantum state selectivity using by strain. Our work provides not only piezotronic effect on spin and valley quantum states, but also a guidance for designing novel quantum piezotronic devices. Journal Article Nano Energy 72 104678 Elsevier BV 2211-2855 piezotronics, quantum transport, monolayer MoS2 1 6 2020 2020-06-01 10.1016/j.nanoen.2020.104678 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-03-09T18:06:32.7555488 2020-03-09T18:06:32.7555488 Ruhao Liu 1 Gongwei Hu 2 Minjiang Dan 3 Yaming Zhang 4 Lijie Li 0000-0003-4630-7692 5 Yan Zhang 6 53793__16844__e4e862de17624d639f9207640429effc.pdf liu2020(2).pdf 2020-03-12T14:16:37.6677631 Output 5066332 application/pdf Accepted Manuscript true 2021-03-09T00:00:00.0000000 Released under the terms of a Creative Commons Attribution Non-Commercial No Derivatives License (CC-BY-NC-ND). true eng http://creativecommons.org/licenses/by-nc-nd/4.0/
title Piezotronic spin and valley transistors based on monolayer MoS2
spellingShingle Piezotronic spin and valley transistors based on monolayer MoS2
Lijie Li
title_short Piezotronic spin and valley transistors based on monolayer MoS2
title_full Piezotronic spin and valley transistors based on monolayer MoS2
title_fullStr Piezotronic spin and valley transistors based on monolayer MoS2
title_full_unstemmed Piezotronic spin and valley transistors based on monolayer MoS2
title_sort Piezotronic spin and valley transistors based on monolayer MoS2
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Ruhao Liu
Gongwei Hu
Minjiang Dan
Yaming Zhang
Lijie Li
Yan Zhang
format Journal article
container_title Nano Energy
container_volume 72
container_start_page 104678
publishDate 2020
institution Swansea University
issn 2211-2855
doi_str_mv 10.1016/j.nanoen.2020.104678
publisher Elsevier BV
document_store_str 1
active_str 0
description Piezotronics and piezo-phototronics based on the third generation semiconductors are two novel fields for low power consumption, self-powered technology and internet of things. Strain-induced piezoelectric field plays a key role to modulate not only charge-carrier transport but also quantum transport properties in piezoelectric semiconductors, especially for two-dimensional materials which can withstand large strain. In this paper, we theoretically study piezotronic effect on the modulation of spin and valley properties in single-layered MoS2. Spin- and valley-dependent conductance, electronic density distribution and polarization ratio are investigated by quantum transport calculation. Because of piezotronic effect, strain-gated spin and valley transistors have excellent quantum state selectivity using by strain. Our work provides not only piezotronic effect on spin and valley quantum states, but also a guidance for designing novel quantum piezotronic devices.
published_date 2020-06-01T04:06:55Z
_version_ 1763753502601904128
score 11.01628

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