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Phase dependence of Schottky barrier heights for Ge–Sb–Te and related phase-change materials

Zhaofu Zhang, Yuzheng Guo Orcid Logo, John Robertson

Journal of Applied Physics, Volume: 127, Issue: 15, Start page: 155301

Swansea University Author: Yuzheng Guo Orcid Logo

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DOI (Published version): 10.1063/5.0001912

Abstract

The large difference of dielectric functions between the amorphous and crystalline phases of Ge–Sb–Te based phase-change materials (PCMs) used in memory storage devices also affects their Schottky barrier heights (SBHs) and thus their electrical device properties. Here, the SBHs of each phase of Ge2...

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Published in: Journal of Applied Physics
ISSN: 0021-8979 1089-7550
Published: AIP Publishing 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa54101
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Abstract: The large difference of dielectric functions between the amorphous and crystalline phases of Ge–Sb–Te based phase-change materials (PCMs) used in memory storage devices also affects their Schottky barrier heights (SBHs) and thus their electrical device properties. Here, the SBHs of each phase of Ge2Sb2Te5, GeTe, GeSe, and SnTe are found by density functional supercell calculations. The Fermi level pinning factor S calculated for the crystalline phases (with a larger dielectric constant) is smaller than their amorphous phases, agreeing well with the empirical relationship linking SBH to a dielectric constant. The relatively large dielectric constant of crystalline PCMs arises from their resonant bonding (metavalent bonding), but their pinning factor is not always as small as empirically expected. The results are useful for optimizing the design of metal contacts for Ge–Sb–Te type phase-change memory devices.
Issue: 15
Start Page: 155301

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