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Magnetotransport properties of p-type carbon-doped ZnO thin films

T. S Herng, S. P Lau, L Wang, B. C Zhao, Yu S. F, M Tanemura, A Akaike, K. S Teng, Vincent Teng Orcid Logo

Applied Physics Letters, Volume: 95, Issue: 1, Start page: 012505

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1063/1.3176434

Published in: Applied Physics Letters
ISSN: 0003-6951
Published: 2009
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URI: https://cronfa.swan.ac.uk/Record/cronfa5659
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first_indexed 2013-07-23T11:53:20Z
last_indexed 2018-02-09T04:32:19Z
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2015-05-08T10:01:53.2004111</datestamp><bib-version>v2</bib-version><id>5659</id><entry>2013-09-03</entry><title>Magnetotransport properties of p-type carbon-doped ZnO thin films</title><swanseaauthors><author><sid>98f529f56798da1ba3e6e93d2817c114</sid><ORCID>0000-0003-4325-8573</ORCID><firstname>Vincent</firstname><surname>Teng</surname><name>Vincent Teng</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEEG</deptcode><abstract></abstract><type>Journal Article</type><journal>Applied Physics Letters</journal><volume>95</volume><journalNumber>1</journalNumber><paginationStart>012505</paginationStart><publisher/><issnPrint>0003-6951</issnPrint><issnElectronic/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2009</publishedYear><publishedDate>2009-12-31</publishedDate><doi>10.1063/1.3176434</doi><url/><notes>This is an international collaborative project involving researchers from Nanyang Technological University (Singapore), Hong Kong Polytechnic University (Hong Kong) and Nagoya Institute of Technology (Japan) to investigate the magnetotransport properties of carbon-doped ZnO dilute magnetic semiconducting (DMS) thin film for room temperature spintronic applications. This ambiguously intrinsic DMS material system does not contain magnetic ions and hence does not encounter the problem of ferromagnetic precipitates as observed in most magnetically doped DMS material. Spintronic devices based on this novel DMS material would therefore exhibit far greater performances and reliability.</notes><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2015-05-08T10:01:53.2004111</lastEdited><Created>2013-09-03T06:16:25.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>T. S</firstname><surname>Herng</surname><order>1</order></author><author><firstname>S. P</firstname><surname>Lau</surname><order>2</order></author><author><firstname>L</firstname><surname>Wang</surname><order>3</order></author><author><firstname>B. C</firstname><surname>Zhao</surname><order>4</order></author><author><firstname>Yu</firstname><surname>S. F</surname><order>5</order></author><author><firstname>M</firstname><surname>Tanemura</surname><order>6</order></author><author><firstname>A</firstname><surname>Akaike</surname><order>7</order></author><author><firstname>K. S</firstname><surname>Teng</surname><order>8</order></author><author><firstname>Vincent</firstname><surname>Teng</surname><orcid>0000-0003-4325-8573</orcid><order>9</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2015-05-08T10:01:53.2004111 v2 5659 2013-09-03 Magnetotransport properties of p-type carbon-doped ZnO thin films 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2013-09-03 EEEG Journal Article Applied Physics Letters 95 1 012505 0003-6951 31 12 2009 2009-12-31 10.1063/1.3176434 This is an international collaborative project involving researchers from Nanyang Technological University (Singapore), Hong Kong Polytechnic University (Hong Kong) and Nagoya Institute of Technology (Japan) to investigate the magnetotransport properties of carbon-doped ZnO dilute magnetic semiconducting (DMS) thin film for room temperature spintronic applications. This ambiguously intrinsic DMS material system does not contain magnetic ions and hence does not encounter the problem of ferromagnetic precipitates as observed in most magnetically doped DMS material. Spintronic devices based on this novel DMS material would therefore exhibit far greater performances and reliability. COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2015-05-08T10:01:53.2004111 2013-09-03T06:16:25.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering T. S Herng 1 S. P Lau 2 L Wang 3 B. C Zhao 4 Yu S. F 5 M Tanemura 6 A Akaike 7 K. S Teng 8 Vincent Teng 0000-0003-4325-8573 9
title Magnetotransport properties of p-type carbon-doped ZnO thin films
spellingShingle Magnetotransport properties of p-type carbon-doped ZnO thin films
Vincent Teng
title_short Magnetotransport properties of p-type carbon-doped ZnO thin films
title_full Magnetotransport properties of p-type carbon-doped ZnO thin films
title_fullStr Magnetotransport properties of p-type carbon-doped ZnO thin films
title_full_unstemmed Magnetotransport properties of p-type carbon-doped ZnO thin films
title_sort Magnetotransport properties of p-type carbon-doped ZnO thin films
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 T. S Herng
S. P Lau
L Wang
B. C Zhao
Yu S. F
M Tanemura
A Akaike
K. S Teng
Vincent Teng
format Journal article
container_title Applied Physics Letters
container_volume 95
container_issue 1
container_start_page 012505
publishDate 2009
institution Swansea University
issn 0003-6951
doi_str_mv 10.1063/1.3176434
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2009-12-31T03:06:51Z
_version_ 1763749723014955008
score 11.016258

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