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Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO

Menghan Jia, Fang Wang, Libin Tang, Jinzhong Xiang, Vincent Teng Orcid Logo, Shu Ping Lau, Yanfei Lü

Optics and Laser Technology, Volume: 157, Start page: 108634

Swansea University Author: Vincent Teng Orcid Logo

  • Accepted Manuscript under embargo until: 23rd September 2023

Abstract

Ultraviolet (UV) photodetector has found extensive applications, ranging from optical communication to ozone sensing. Wide bandgap metal oxide heterostructures have gained significant interest in the development of UV photodetectors due to their excellent electronic and optical properties, as well a...

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Published in: Optics and Laser Technology
ISSN: 0030-3992
Published: Elsevier BV 2023
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa61325
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Abstract: Ultraviolet (UV) photodetector has found extensive applications, ranging from optical communication to ozone sensing. Wide bandgap metal oxide heterostructures have gained significant interest in the development of UV photodetectors due to their excellent electronic and optical properties, as well as ease of fabrication. However, there are surface and interface issues at these heterostructures that have detrimental effects on device performance. In this work, UV photodetector consisting of p-NiO/SiO2/n-ZnO heterostructure was prepared by RF magnetron sputtering method. The device exhibited remarkable performances, such as having a rectification ratio of 57, responsivity (R) of 5.77 AW-1, external quantum efficiency (EQE) of 1.96×103 % and rise time of 0.048 s at a low power consumption of -0.1 V under 365 nm UV irradiation. This work demonstrated a method for low-cost fabrication of photodetectors with rectification behavior and at low power consumption.
Keywords: UV photodetector; Metal oxide semiconductor; Heterostructure; Low power consumption
College: Faculty of Science and Engineering
Start Page: 108634