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Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO

Menghan Jia, Fang Wang, Libin Tang, Jinzhong Xiang, Vincent Teng Orcid Logo, Shu Ping Lau, Yanfei Lü

Optics and Laser Technology, Volume: 157, Start page: 108634

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1016/j.optlastec.2022.108634

Abstract

Ultraviolet (UV) photodetector has found extensive applications, ranging from optical communication to ozone sensing. Wide bandgap metal oxide heterostructures have gained significant interest in the development of UV photodetectors due to their excellent electronic and optical properties, as well a...

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Published in: Optics and Laser Technology
ISSN: 0030-3992
Published: Elsevier BV 2023
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URI: https://cronfa.swan.ac.uk/Record/cronfa61325
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first_indexed 2022-09-27T07:57:33Z
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spelling 2022-10-12T12:23:34.8507914 v2 61325 2022-09-26 Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2022-09-26 EEEG Ultraviolet (UV) photodetector has found extensive applications, ranging from optical communication to ozone sensing. Wide bandgap metal oxide heterostructures have gained significant interest in the development of UV photodetectors due to their excellent electronic and optical properties, as well as ease of fabrication. However, there are surface and interface issues at these heterostructures that have detrimental effects on device performance. In this work, UV photodetector consisting of p-NiO/SiO2/n-ZnO heterostructure was prepared by RF magnetron sputtering method. The device exhibited remarkable performances, such as having a rectification ratio of 57, responsivity (R) of 5.77 AW-1, external quantum efficiency (EQE) of 1.96×103 % and rise time of 0.048 s at a low power consumption of -0.1 V under 365 nm UV irradiation. This work demonstrated a method for low-cost fabrication of photodetectors with rectification behavior and at low power consumption. Journal Article Optics and Laser Technology 157 108634 Elsevier BV 0030-3992 UV photodetector; Metal oxide semiconductor; Heterostructure; Low power consumption 1 1 2023 2023-01-01 10.1016/j.optlastec.2022.108634 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2022-10-12T12:23:34.8507914 2022-09-26T10:20:53.0000716 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Menghan Jia 1 Fang Wang 2 Libin Tang 3 Jinzhong Xiang 4 Vincent Teng 0000-0003-4325-8573 5 Shu Ping Lau 6 Yanfei Lü 7 Under embargo Under embargo 2022-09-27T08:57:19.5401337 Output 929672 application/pdf Accepted Manuscript true 2023-09-23T00:00:00.0000000 ©2022 All rights reserved. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution Non-Commercial No Derivatives License (CC-BY-NC-ND) true eng https://creativecommons.org/licenses/by-nc-nd/4.0/
title Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO
spellingShingle Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO
Vincent Teng
title_short Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO
title_full Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO
title_fullStr Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO
title_full_unstemmed Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO
title_sort Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 Menghan Jia
Fang Wang
Libin Tang
Jinzhong Xiang
Vincent Teng
Shu Ping Lau
Yanfei Lü
format Journal article
container_title Optics and Laser Technology
container_volume 157
container_start_page 108634
publishDate 2023
institution Swansea University
issn 0030-3992
doi_str_mv 10.1016/j.optlastec.2022.108634
publisher Elsevier BV
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
description Ultraviolet (UV) photodetector has found extensive applications, ranging from optical communication to ozone sensing. Wide bandgap metal oxide heterostructures have gained significant interest in the development of UV photodetectors due to their excellent electronic and optical properties, as well as ease of fabrication. However, there are surface and interface issues at these heterostructures that have detrimental effects on device performance. In this work, UV photodetector consisting of p-NiO/SiO2/n-ZnO heterostructure was prepared by RF magnetron sputtering method. The device exhibited remarkable performances, such as having a rectification ratio of 57, responsivity (R) of 5.77 AW-1, external quantum efficiency (EQE) of 1.96×103 % and rise time of 0.048 s at a low power consumption of -0.1 V under 365 nm UV irradiation. This work demonstrated a method for low-cost fabrication of photodetectors with rectification behavior and at low power consumption.
published_date 2023-01-01T04:20:05Z
_version_ 1763754330798686208
score 10.998093

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