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High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
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Shu Ping Lau
Nanoscale Research Letters, Volume: 15, Issue: 1
Swansea University Author:
Vincent Teng
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DOI (Published version): 10.1186/s11671-020-3271-9
Abstract
Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electro...
| Published in: | Nanoscale Research Letters |
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| ISSN: | 1931-7573 1556-276X |
| Published: |
Springer Science and Business Media LLC
2020
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa53742 |
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| Abstract: |
Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of (2¯¯¯ 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW−1 under a 245-nm illumination (27 μWcm−2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W−1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction. |
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| Keywords: |
β-Ga2O3; NiO; Heterojunction; UV photodetector |
| College: |
Faculty of Science and Engineering |
| Issue: |
1 |