No Cover Image

Journal article 744 views 133 downloads

High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

Menghan Jia, Fang Wang, Libin Tang, Jinzhong Xiang, Vincent Teng Orcid Logo, Shu Ping Lau

Nanoscale Research Letters, Volume: 15, Issue: 1

Swansea University Author: Vincent Teng Orcid Logo

  • jia2020.pdf

    PDF | Version of Record

    Released under the terms of a Creative Commons Attribution 4.0 International License (CC-BY).

    Download (2.34MB)

Check full text

DOI (Published version): 10.1186/s11671-020-3271-9

Abstract

Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electro...

Full description

Published in: Nanoscale Research Letters
ISSN: 1931-7573 1556-276X
Published: Springer Science and Business Media LLC 2020
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa53742
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2020-03-05T13:32:01Z
last_indexed 2020-10-24T03:06:11Z
id cronfa53742
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2020-10-23T11:28:29.1649754</datestamp><bib-version>v2</bib-version><id>53742</id><entry>2020-03-05</entry><title>High-Performance Deep Ultraviolet Photodetector Based on NiO/&#x3B2;-Ga2O3 Heterojunction</title><swanseaauthors><author><sid>98f529f56798da1ba3e6e93d2817c114</sid><ORCID>0000-0003-4325-8573</ORCID><firstname>Vincent</firstname><surname>Teng</surname><name>Vincent Teng</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2020-03-05</date><deptcode>EEEG</deptcode><abstract>Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/&#x3B2;-Ga2O3 heterojunction was developed and investigated. The &#x3B2;-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of (2&#xAF;&#xAF;&#xAF; 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW&#x2212;1 under a 245-nm illumination (27 &#x3BC;Wcm&#x2212;2) and the maximum detectivity (D*) of 3.14&#x2009;&#xD7;&#x2009;1012 cmHz1/2&#x2009;W&#x2212;1, which was attributed to the p-NiO/n-&#x3B2;-Ga2O3 heterojunction.</abstract><type>Journal Article</type><journal>Nanoscale Research Letters</journal><volume>15</volume><journalNumber>1</journalNumber><publisher>Springer Science and Business Media LLC</publisher><issnPrint>1931-7573</issnPrint><issnElectronic>1556-276X</issnElectronic><keywords>&#x3B2;-Ga2O3; NiO; Heterojunction; UV photodetector</keywords><publishedDay>1</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2020</publishedYear><publishedDate>2020-12-01</publishedDate><doi>10.1186/s11671-020-3271-9</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2020-10-23T11:28:29.1649754</lastEdited><Created>2020-03-05T09:35:11.2902481</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Menghan</firstname><surname>Jia</surname><order>1</order></author><author><firstname>Fang</firstname><surname>Wang</surname><order>2</order></author><author><firstname>Libin</firstname><surname>Tang</surname><order>3</order></author><author><firstname>Jinzhong</firstname><surname>Xiang</surname><order>4</order></author><author><firstname>Vincent</firstname><surname>Teng</surname><orcid>0000-0003-4325-8573</orcid><order>5</order></author><author><firstname>Shu Ping</firstname><surname>Lau</surname><order>6</order></author></authors><documents><document><filename>53742__16775__93d20d9de746467c9155bfe6437c8f34.pdf</filename><originalFilename>jia2020.pdf</originalFilename><uploaded>2020-03-05T09:43:52.1409255</uploaded><type>Output</type><contentLength>2452586</contentLength><contentType>application/pdf</contentType><version>Version of Record</version><cronfaStatus>true</cronfaStatus><documentNotes>Released under the terms of a Creative Commons Attribution 4.0 International License (CC-BY).</documentNotes><copyrightCorrect>true</copyrightCorrect><language>eng</language><licence>http://creativecommons.org/licenses/by/4.0/</licence></document></documents><OutputDurs/></rfc1807>
spelling 2020-10-23T11:28:29.1649754 v2 53742 2020-03-05 High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2020-03-05 EEEG Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of (2¯¯¯ 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW−1 under a 245-nm illumination (27 μWcm−2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W−1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction. Journal Article Nanoscale Research Letters 15 1 Springer Science and Business Media LLC 1931-7573 1556-276X β-Ga2O3; NiO; Heterojunction; UV photodetector 1 12 2020 2020-12-01 10.1186/s11671-020-3271-9 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-10-23T11:28:29.1649754 2020-03-05T09:35:11.2902481 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Menghan Jia 1 Fang Wang 2 Libin Tang 3 Jinzhong Xiang 4 Vincent Teng 0000-0003-4325-8573 5 Shu Ping Lau 6 53742__16775__93d20d9de746467c9155bfe6437c8f34.pdf jia2020.pdf 2020-03-05T09:43:52.1409255 Output 2452586 application/pdf Version of Record true Released under the terms of a Creative Commons Attribution 4.0 International License (CC-BY). true eng http://creativecommons.org/licenses/by/4.0/
title High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
spellingShingle High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
Vincent Teng
title_short High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
title_full High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
title_fullStr High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
title_full_unstemmed High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
title_sort High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 Menghan Jia
Fang Wang
Libin Tang
Jinzhong Xiang
Vincent Teng
Shu Ping Lau
format Journal article
container_title Nanoscale Research Letters
container_volume 15
container_issue 1
publishDate 2020
institution Swansea University
issn 1931-7573
1556-276X
doi_str_mv 10.1186/s11671-020-3271-9
publisher Springer Science and Business Media LLC
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of (2¯¯¯ 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW−1 under a 245-nm illumination (27 μWcm−2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W−1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction.
published_date 2020-12-01T04:06:51Z
_version_ 1763753498096173056
score 11.016235

Similar Items