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Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells

Ochai Oklobia, Giray Kartopu, S. Jones, P. Siderfin, B. Grew, Harrison Lee, Wing Chung Tsoi Orcid Logo, Ali Abbas, J.M. Walls, D.L. McGott, M.O. Reese, Stuart Irvine Orcid Logo

Solar Energy Materials and Solar Cells, Volume: 231, Start page: 111325

Swansea University Authors: Ochai Oklobia , Giray Kartopu , Harrison Lee , Wing Chung Tsoi Orcid Logo, Stuart Irvine Orcid Logo

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Abstract

Recent developments in CdTe solar cell technology have included the incorporation of ternary alloy Cd(Se,Te) in the devices. CdTe absorber band gap grading due to Se alloying contributes to current density enhancement and can result in device performance improvement. Here we report Cd(Se,Te) polycry...

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Published in: Solar Energy Materials and Solar Cells
ISSN: 0927-0248
Published: Elsevier BV 2021
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URI: https://cronfa.swan.ac.uk/Record/cronfa57656
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CdTe absorber band gap grading due to Se alloying contributes to current density enhancement and can result in device performance improvement. Here we report Cd(Se,Te) polycrystalline thin films grown by a chamberless inline atmospheric pressure metal organic chemical vapour deposition technique, with subsequent incorporation in CdTe solar cells. The compositional dependence of the crystal structure and optical properties of Cd(Se,Te) are examined. Selenium graded Cd(Se,Te)/CdTe absorber structure in devices are demonstrated using either a single CdSe layer or CdSe/Cd(Se,Te) bilayer (with or without As doping in the Cd(Se,Te) layer). Cross-sectional TEM/EDS, photoluminescence spectra and secondary ion mass spectroscopy analysis confirmed the formation of a graded Se profile toward the back contact with a diffusion length of ~1.5 &#x3BC;m and revealed back-diffusion of Group V (As) dopants from the CdTe layer into Cd(Se,Te) grains. Due to the strong Se/Te interdiffusion, CdSe in the Se bilayer configuration was unable to form an n-type emitter layer in processed devices. In situ As doping of the Cd(Se,Te) layer benefited the device junction quality with current density reaching 28.3 mA/cm2. 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spelling 2021-09-16T16:24:03.7066482 v2 57656 2021-08-19 Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells d447e8d0345473fa625813546bccc592 Ochai Oklobia Ochai Oklobia true false 5c4917e0a29801844ec31737672f930c Giray Kartopu Giray Kartopu true false 0ef65494d0dda7f6aea5ead8bb6ce466 Harrison Lee Harrison Lee true false 7e5f541df6635a9a8e1a579ff2de5d56 0000-0003-3836-5139 Wing Chung Tsoi Wing Chung Tsoi true false 1ddb966eccef99aa96e87f1ea4917f1f 0000-0002-1652-4496 Stuart Irvine Stuart Irvine true false 2021-08-19 MTLS Recent developments in CdTe solar cell technology have included the incorporation of ternary alloy Cd(Se,Te) in the devices. CdTe absorber band gap grading due to Se alloying contributes to current density enhancement and can result in device performance improvement. Here we report Cd(Se,Te) polycrystalline thin films grown by a chamberless inline atmospheric pressure metal organic chemical vapour deposition technique, with subsequent incorporation in CdTe solar cells. The compositional dependence of the crystal structure and optical properties of Cd(Se,Te) are examined. Selenium graded Cd(Se,Te)/CdTe absorber structure in devices are demonstrated using either a single CdSe layer or CdSe/Cd(Se,Te) bilayer (with or without As doping in the Cd(Se,Te) layer). Cross-sectional TEM/EDS, photoluminescence spectra and secondary ion mass spectroscopy analysis confirmed the formation of a graded Se profile toward the back contact with a diffusion length of ~1.5 μm and revealed back-diffusion of Group V (As) dopants from the CdTe layer into Cd(Se,Te) grains. Due to the strong Se/Te interdiffusion, CdSe in the Se bilayer configuration was unable to form an n-type emitter layer in processed devices. In situ As doping of the Cd(Se,Te) layer benefited the device junction quality with current density reaching 28.3 mA/cm2. The results provide useful insights for the optimisation of Cd(Se,Te)/CdTe solar cells. Journal Article Solar Energy Materials and Solar Cells 231 111325 Elsevier BV 0927-0248 CdTe, CdSe, Cd(Se,Te), Thin film, As doping, MOCVD, Solar cells, Photovoltaics 1 10 2021 2021-10-01 10.1016/j.solmat.2021.111325 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University 2021-09-16T16:24:03.7066482 2021-08-19T09:55:03.5475242 College of Engineering Engineering Ochai Oklobia 1 Giray Kartopu 2 S. Jones 3 P. Siderfin 4 B. Grew 5 Harrison Lee 6 Wing Chung Tsoi 0000-0003-3836-5139 7 Ali Abbas 8 J.M. Walls 9 D.L. McGott 10 M.O. Reese 11 Stuart Irvine 0000-0002-1652-4496 12 57656__20896__b6490d56647c4c3798b9375870e246f2.pdf 57656_VoR.pdf 2021-09-16T16:22:59.6076983 Output 9874148 application/pdf Version of Record true © 2021 The Authors. This is an open access article under the CC BY-NC-ND license true eng http://creativecommons.org/licenses/by-nc-nd/4.0/
title Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells
spellingShingle Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells
Ochai, Oklobia
Giray, Kartopu
Harrison, Lee
Wing Chung, Tsoi
Stuart, Irvine
title_short Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells
title_full Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells
title_fullStr Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells
title_full_unstemmed Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells
title_sort Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells
author_id_str_mv d447e8d0345473fa625813546bccc592
5c4917e0a29801844ec31737672f930c
0ef65494d0dda7f6aea5ead8bb6ce466
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1ddb966eccef99aa96e87f1ea4917f1f
author_id_fullname_str_mv d447e8d0345473fa625813546bccc592_***_Ochai, Oklobia_***_
5c4917e0a29801844ec31737672f930c_***_Giray, Kartopu_***_
0ef65494d0dda7f6aea5ead8bb6ce466_***_Harrison, Lee_***_
7e5f541df6635a9a8e1a579ff2de5d56_***_Wing Chung, Tsoi_***_0000-0003-3836-5139
1ddb966eccef99aa96e87f1ea4917f1f_***_Stuart, Irvine_***_0000-0002-1652-4496
author Ochai, Oklobia
Giray, Kartopu
Harrison, Lee
Wing Chung, Tsoi
Stuart, Irvine
author2 Ochai Oklobia
Giray Kartopu
S. Jones
P. Siderfin
B. Grew
Harrison Lee
Wing Chung Tsoi
Ali Abbas
J.M. Walls
D.L. McGott
M.O. Reese
Stuart Irvine
format Journal article
container_title Solar Energy Materials and Solar Cells
container_volume 231
container_start_page 111325
publishDate 2021
institution Swansea University
issn 0927-0248
doi_str_mv 10.1016/j.solmat.2021.111325
publisher Elsevier BV
college_str College of Engineering
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hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
document_store_str 1
active_str 0
description Recent developments in CdTe solar cell technology have included the incorporation of ternary alloy Cd(Se,Te) in the devices. CdTe absorber band gap grading due to Se alloying contributes to current density enhancement and can result in device performance improvement. Here we report Cd(Se,Te) polycrystalline thin films grown by a chamberless inline atmospheric pressure metal organic chemical vapour deposition technique, with subsequent incorporation in CdTe solar cells. The compositional dependence of the crystal structure and optical properties of Cd(Se,Te) are examined. Selenium graded Cd(Se,Te)/CdTe absorber structure in devices are demonstrated using either a single CdSe layer or CdSe/Cd(Se,Te) bilayer (with or without As doping in the Cd(Se,Te) layer). Cross-sectional TEM/EDS, photoluminescence spectra and secondary ion mass spectroscopy analysis confirmed the formation of a graded Se profile toward the back contact with a diffusion length of ~1.5 μm and revealed back-diffusion of Group V (As) dopants from the CdTe layer into Cd(Se,Te) grains. Due to the strong Se/Te interdiffusion, CdSe in the Se bilayer configuration was unable to form an n-type emitter layer in processed devices. In situ As doping of the Cd(Se,Te) layer benefited the device junction quality with current density reaching 28.3 mA/cm2. The results provide useful insights for the optimisation of Cd(Se,Te)/CdTe solar cells.
published_date 2021-10-01T04:27:56Z
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