Journal article 1757 views
An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor
International Journal of Electronics, Volume: 96, Issue: 7, Pages: 767 - 779
Swansea University Authors:
Zhongfu Zhou, Petar Igic
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1080/00207210902847413
Abstract
An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article. The one-dimensional physical model of low-gain wide-base BJT is employed based on the equivalent non-linear lossy transm...
| Published in: | International Journal of Electronics |
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| ISSN: | 1362-3060 |
| Published: |
2009
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa5784 |
| Abstract: |
An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article. The one-dimensional physical model of low-gain wide-base BJT is employed based on the equivalent non-linear lossy transmission line, whereas a SPICE Level 3 model is used for the diffused MOST part. The influence of voltage dependent drain-to-gate overlapping capacitance and the conductivity modulated base (drain) ohmic resistance are modelled separately. The main advantages of novel PT IGBT model are a small set of model parameters, an easy implementation in SPICE simulator and the high accuracy confirmed by comparing the simulation results with the electrical measurements of test power circuit. |
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| Keywords: |
IEBT, modelling, sub-circuit, SPICE, physical |
| College: |
Faculty of Science and Engineering |
| Issue: |
7 |
| Start Page: |
767 |
| End Page: |
779 |