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An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor

Nebojsa Jankovic, Zhongfu Zhou Orcid Logo, Steve Batcup, Petar Igic Orcid Logo

International Journal of Electronics, Volume: 96, Issue: 7, Pages: 767 - 779

Swansea University Authors: Zhongfu Zhou Orcid Logo, Petar Igic Orcid Logo

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Abstract

An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article. The one-dimensional physical model of low-gain wide-base BJT is employed based on the equivalent non-linear lossy transm...

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Published in: International Journal of Electronics
ISSN: 1362-3060
Published: 2009
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa5784
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Abstract: An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article. The one-dimensional physical model of low-gain wide-base BJT is employed based on the equivalent non-linear lossy transmission line, whereas a SPICE Level 3 model is used for the diffused MOST part. The influence of voltage dependent drain-to-gate overlapping capacitance and the conductivity modulated base (drain) ohmic resistance are modelled separately. The main advantages of novel PT IGBT model are a small set of model parameters, an easy implementation in SPICE simulator and the high accuracy confirmed by comparing the simulation results with the electrical measurements of test power circuit.
Keywords: IEBT, modelling, sub-circuit, SPICE, physical
College: College of Engineering
Issue: 7
Start Page: 767
End Page: 779