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An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor

Nebojsa Jankovic, Zhongfu Zhou Orcid Logo, Steve Batcup, Petar Igic Orcid Logo

International Journal of Electronics, Volume: 96, Issue: 7, Pages: 767 - 779

Swansea University Authors: Zhongfu Zhou Orcid Logo, Petar Igic Orcid Logo

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DOI (Published version): 10.1080/00207210902847413

Abstract

An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article. The one-dimensional physical model of low-gain wide-base BJT is employed based on the equivalent non-linear lossy transm...

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Published in: International Journal of Electronics
ISSN: 1362-3060
Published: 2009
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URI: https://cronfa.swan.ac.uk/Record/cronfa5784
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first_indexed 2013-07-23T11:53:43Z
last_indexed 2018-02-09T04:32:12Z
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spelling 2017-10-11T11:13:25.0206037 v2 5784 2013-01-21 An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor 614fc57cde2ee383718d4f4c462b5fba 0000-0002-0843-7253 Zhongfu Zhou Zhongfu Zhou true false e085acc259a367abc89338346a150186 0000-0001-8150-8815 Petar Igic Petar Igic true false 2013-01-21 EEEG An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article. The one-dimensional physical model of low-gain wide-base BJT is employed based on the equivalent non-linear lossy transmission line, whereas a SPICE Level 3 model is used for the diffused MOST part. The influence of voltage dependent drain-to-gate overlapping capacitance and the conductivity modulated base (drain) ohmic resistance are modelled separately. The main advantages of novel PT IGBT model are a small set of model parameters, an easy implementation in SPICE simulator and the high accuracy confirmed by comparing the simulation results with the electrical measurements of test power circuit. Journal Article International Journal of Electronics 96 7 767 779 1362-3060 IEBT, modelling, sub-circuit, SPICE, physical 31 12 2009 2009-12-31 10.1080/00207210902847413 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2017-10-11T11:13:25.0206037 2013-01-21T06:01:11.0000000 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Nebojsa Jankovic 1 Zhongfu Zhou 0000-0002-0843-7253 2 Steve Batcup 3 Petar Igic 0000-0001-8150-8815 4
title An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor
spellingShingle An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor
Zhongfu Zhou
Petar Igic
title_short An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor
title_full An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor
title_fullStr An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor
title_full_unstemmed An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor
title_sort An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor
author_id_str_mv 614fc57cde2ee383718d4f4c462b5fba
e085acc259a367abc89338346a150186
author_id_fullname_str_mv 614fc57cde2ee383718d4f4c462b5fba_***_Zhongfu Zhou
e085acc259a367abc89338346a150186_***_Petar Igic
author Zhongfu Zhou
Petar Igic
author2 Nebojsa Jankovic
Zhongfu Zhou
Steve Batcup
Petar Igic
format Journal article
container_title International Journal of Electronics
container_volume 96
container_issue 7
container_start_page 767
publishDate 2009
institution Swansea University
issn 1362-3060
doi_str_mv 10.1080/00207210902847413
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
document_store_str 0
active_str 0
description An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article. The one-dimensional physical model of low-gain wide-base BJT is employed based on the equivalent non-linear lossy transmission line, whereas a SPICE Level 3 model is used for the diffused MOST part. The influence of voltage dependent drain-to-gate overlapping capacitance and the conductivity modulated base (drain) ohmic resistance are modelled separately. The main advantages of novel PT IGBT model are a small set of model parameters, an easy implementation in SPICE simulator and the high accuracy confirmed by comparing the simulation results with the electrical measurements of test power circuit.
published_date 2009-12-31T03:06:59Z
_version_ 1763749732007542784
score 11.012678

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