No Cover Image

Journal article 26 views

Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films / Pin Tian, Hongbo Wu, Libin Tang, Jinzhong Xiang, Rongbin Ji, Shu Ping Lau, Vincent Teng, Wei Guo, Yugui Yao, Lain-Jong Li

Journal of Materials Chemistry C, Volume: 39

Swansea University Author: Vincent Teng

  • Accepted Manuscript under embargo until: 28th August 2022

Check full text

DOI (Published version): 10.1039/d1tc02877d

Abstract

Two-dimensional (2D) materials exhibit many unique optical and electronic properties that are highly desirable for application in optoelectronics. Here, we report the study of photodetector based on 2D Bi2O2Te grown on n-Si substrate. The 2D Bi2O2Te material was transformed from sputtered Bi2Te3 ult...

Full description

Published in: Journal of Materials Chemistry C
ISSN: 2050-7526 2050-7534
Published: Royal Society of Chemistry (RSC) 2021
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa57904
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2021-09-16T08:07:09Z
last_indexed 2021-12-03T04:18:19Z
id cronfa57904
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2021-12-02T09:12:48.9277437</datestamp><bib-version>v2</bib-version><id>57904</id><entry>2021-09-16</entry><title>Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films</title><swanseaauthors><author><sid>98f529f56798da1ba3e6e93d2817c114</sid><ORCID>0000-0003-4325-8573</ORCID><firstname>Vincent</firstname><surname>Teng</surname><name>Vincent Teng</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2021-09-16</date><deptcode>EEEG</deptcode><abstract>Two-dimensional (2D) materials exhibit many unique optical and electronic properties that are highly desirable for application in optoelectronics. Here, we report the study of photodetector based on 2D Bi2O2Te grown on n-Si substrate. The 2D Bi2O2Te material was transformed from sputtered Bi2Te3 ultrathin film after rapid annealing at 400 &#x2103; for 10 min in air atmosphere. The photodetector was capable of detecting a broad wavelength from 210 nm to 2.4 &#x3BC;m with excellent responsivity of up to 3x105 and 2x104 AW-1, and detectivity of 4x1015 and 2x1014 Jones at deep ultraviolet (UV) and short-wave infrared (SWIR) under weak light illumination, respectively. The effectiveness of 2D materials in weak light detection was investigated by analysis of the photocurrent density contribution. Importantly, the facile growth process with low annealing temperature would allow direct large-scale integration of the 2D Bi2O2Te materials with complementary metal-oxide&#x2013;semiconductor (CMOS) technology.</abstract><type>Journal Article</type><journal>Journal of Materials Chemistry C</journal><volume>39</volume><journalNumber/><paginationStart/><paginationEnd/><publisher>Royal Society of Chemistry (RSC)</publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>2050-7526</issnPrint><issnElectronic>2050-7534</issnElectronic><keywords/><publishedDay>28</publishedDay><publishedMonth>8</publishedMonth><publishedYear>2021</publishedYear><publishedDate>2021-08-28</publishedDate><doi>10.1039/d1tc02877d</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2021-12-02T09:12:48.9277437</lastEdited><Created>2021-09-16T09:00:52.5980482</Created><path><level id="1">College of Engineering</level><level id="2">Engineering</level></path><authors><author><firstname>Pin</firstname><surname>Tian</surname><order>1</order></author><author><firstname>Hongbo</firstname><surname>Wu</surname><order>2</order></author><author><firstname>Libin</firstname><surname>Tang</surname><order>3</order></author><author><firstname>Jinzhong</firstname><surname>Xiang</surname><order>4</order></author><author><firstname>Rongbin</firstname><surname>Ji</surname><order>5</order></author><author><firstname>Shu Ping</firstname><surname>Lau</surname><order>6</order></author><author><firstname>Vincent</firstname><surname>Teng</surname><orcid>0000-0003-4325-8573</orcid><order>7</order></author><author><firstname>Wei</firstname><surname>Guo</surname><order>8</order></author><author><firstname>Yugui</firstname><surname>Yao</surname><order>9</order></author><author><firstname>Lain-Jong</firstname><surname>Li</surname><order>10</order></author></authors><documents><document><filename>Under embargo</filename><originalFilename>Under embargo</originalFilename><uploaded>2021-09-16T09:44:45.1085838</uploaded><type>Output</type><contentLength>2212096</contentLength><contentType>application/pdf</contentType><version>Accepted Manuscript</version><cronfaStatus>true</cronfaStatus><embargoDate>2022-08-28T00:00:00.0000000</embargoDate><documentNotes>Released under a Creative Commons Attribution Non-Commercial No Derivatives License (CC-BY-NC-ND)</documentNotes><copyrightCorrect>true</copyrightCorrect><language>eng</language><licence>https://creativecommons.org/licenses/by-nc-nd/2.0/</licence></document></documents><OutputDurs/></rfc1807>
spelling 2021-12-02T09:12:48.9277437 v2 57904 2021-09-16 Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2021-09-16 EEEG Two-dimensional (2D) materials exhibit many unique optical and electronic properties that are highly desirable for application in optoelectronics. Here, we report the study of photodetector based on 2D Bi2O2Te grown on n-Si substrate. The 2D Bi2O2Te material was transformed from sputtered Bi2Te3 ultrathin film after rapid annealing at 400 ℃ for 10 min in air atmosphere. The photodetector was capable of detecting a broad wavelength from 210 nm to 2.4 μm with excellent responsivity of up to 3x105 and 2x104 AW-1, and detectivity of 4x1015 and 2x1014 Jones at deep ultraviolet (UV) and short-wave infrared (SWIR) under weak light illumination, respectively. The effectiveness of 2D materials in weak light detection was investigated by analysis of the photocurrent density contribution. Importantly, the facile growth process with low annealing temperature would allow direct large-scale integration of the 2D Bi2O2Te materials with complementary metal-oxide–semiconductor (CMOS) technology. Journal Article Journal of Materials Chemistry C 39 Royal Society of Chemistry (RSC) 2050-7526 2050-7534 28 8 2021 2021-08-28 10.1039/d1tc02877d COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2021-12-02T09:12:48.9277437 2021-09-16T09:00:52.5980482 College of Engineering Engineering Pin Tian 1 Hongbo Wu 2 Libin Tang 3 Jinzhong Xiang 4 Rongbin Ji 5 Shu Ping Lau 6 Vincent Teng 0000-0003-4325-8573 7 Wei Guo 8 Yugui Yao 9 Lain-Jong Li 10 Under embargo Under embargo 2021-09-16T09:44:45.1085838 Output 2212096 application/pdf Accepted Manuscript true 2022-08-28T00:00:00.0000000 Released under a Creative Commons Attribution Non-Commercial No Derivatives License (CC-BY-NC-ND) true eng https://creativecommons.org/licenses/by-nc-nd/2.0/
title Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films
spellingShingle Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films
Vincent, Teng
title_short Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films
title_full Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films
title_fullStr Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films
title_full_unstemmed Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films
title_sort Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent, Teng
author Vincent, Teng
author2 Pin Tian
Hongbo Wu
Libin Tang
Jinzhong Xiang
Rongbin Ji
Shu Ping Lau
Vincent Teng
Wei Guo
Yugui Yao
Lain-Jong Li
format Journal article
container_title Journal of Materials Chemistry C
container_volume 39
publishDate 2021
institution Swansea University
issn 2050-7526
2050-7534
doi_str_mv 10.1039/d1tc02877d
publisher Royal Society of Chemistry (RSC)
college_str College of Engineering
hierarchytype
hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
document_store_str 0
active_str 0
description Two-dimensional (2D) materials exhibit many unique optical and electronic properties that are highly desirable for application in optoelectronics. Here, we report the study of photodetector based on 2D Bi2O2Te grown on n-Si substrate. The 2D Bi2O2Te material was transformed from sputtered Bi2Te3 ultrathin film after rapid annealing at 400 ℃ for 10 min in air atmosphere. The photodetector was capable of detecting a broad wavelength from 210 nm to 2.4 μm with excellent responsivity of up to 3x105 and 2x104 AW-1, and detectivity of 4x1015 and 2x1014 Jones at deep ultraviolet (UV) and short-wave infrared (SWIR) under weak light illumination, respectively. The effectiveness of 2D materials in weak light detection was investigated by analysis of the photocurrent density contribution. Importantly, the facile growth process with low annealing temperature would allow direct large-scale integration of the 2D Bi2O2Te materials with complementary metal-oxide–semiconductor (CMOS) technology.
published_date 2021-08-28T04:17:38Z
_version_ 1718550064945692672
score 10.845408