Journal article 383 views
Broadband photodetector based on SnTe nanofilm/n-Ge heterostructure
Liyuan Song,
Libin Tang 
,
Qun Hao,
Vincent Teng ,
Hao Lv,
Jingyu Wang,
Jiangmin Feng,
Yan Zhou,
Wenjin He,
Wei Wang
,
Qun Hao,
Vincent Teng ,
Hao Lv,
Jingyu Wang,
Jiangmin Feng,
Yan Zhou,
Wenjin He,
Wei Wang
Nanotechnology, Volume: 33, Issue: 42
Swansea University Author:
Vincent Teng
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1088/1361-6528/ac80cc
Abstract
Combining novel two-dimensional (2D) materials with traditional semiconductors to form heterostructures for photoelectric detection have attracted great attention due to their excellent photoelectric properties. In this study, we reported the formation of a heterostructure comprising of tin tellurid...
| Published in: | Nanotechnology |
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| ISSN: | 0957-4484 1361-6528 |
| Published: |
IOP Publishing
2022
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa60532 |
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| Abstract: |
Combining novel two-dimensional (2D) materials with traditional semiconductors to form heterostructures for photoelectric detection have attracted great attention due to their excellent photoelectric properties. In this study, we reported the formation of a heterostructure comprising of tin telluride (SnTe) and germanium (Ge) by a simple and efficient one-step magnetron sputtering technique. A photodetector was fabricated by sputtering a nanofilm of SnTe on to a pre-masked n-Ge substrate. J-V measurements obtained from the SnTe/n-Ge photodetector demonstrated diode and photovoltaic characteristics in the visible to nearinfrared band (i.e., 400-2050 nm). Under near-infrared illumination at 850 nm with an optical power density of 13.81 mW/cm2, the SnTe/n-Ge photodetector exhibited a small open-circuit voltage of 0.05 V. It also attained a high responsivity (R) and detectivity (D*) of 617.34 mA/W (at bias voltage of -0.5 V) and 2.33×1011 cmHz1/2W-1 (at zero bias), respectively. Therefore, SnTe nanofilm/n-Ge heterostructure is highly suitable for used as low-power broadband photodetector due to its excellent performances and simple device configuration. |
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| Keywords: |
SnTe/n-Ge heterostructure, photodetector |
| College: |
Faculty of Science and Engineering |
| Funders: |
This work was supported by the National Key Research and Development Program (No. 2019YFB2203404), the National Natural Science Foundation of China (No. 61106098), the Program for Innovation Team of Yunnan Province (No. 2018HC020). |
| Issue: |
42 |