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Infrared photodetector based on GeTe nanofilms with high performance / Yiqun Zhao, Libin Tang, Shengyi Yang, Vincent Teng, Shu Ping Lau

Optics Letters, Volume: 45, Issue: 5, Start page: 1108

Swansea University Author: Vincent Teng

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DOI (Published version): 10.1364/ol.385280

Abstract

GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputteri...

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Published in: Optics Letters
ISSN: 0146-9592 1539-4794
Published: The Optical Society 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa53363
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Abstract: GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing. High-performance photodetectors with detectivity of ∼1013 Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work.
Issue: 5
Start Page: 1108