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Infrared photodetector based on GeTe nanofilms with high performance

Yiqun Zhao, Libin Tang, Shengyi Yang, Vincent Teng Orcid Logo, Shu Ping Lau

Optics Letters, Volume: 45, Issue: 5, Pages: 1108 - 1111

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1364/ol.385280

Abstract

GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputteri...

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Published in: Optics Letters
ISSN: 0146-9592 1539-4794
Published: Optica Publishing Group 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa53363
first_indexed 2020-01-27T13:30:32Z
last_indexed 2025-03-12T04:50:45Z
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recordtype SURis
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spelling 2025-03-11T14:57:58.8572268 v2 53363 2020-01-27 Infrared photodetector based on GeTe nanofilms with high performance 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2020-01-27 ACEM GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing. High-performance photodetectors with detectivity of ∼1013 Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work. Journal Article Optics Letters 45 5 1108 1111 Optica Publishing Group 0146-9592 1539-4794 1 3 2020 2020-03-01 10.1364/ol.385280 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Not Required 2025-03-11T14:57:58.8572268 2020-01-27T10:16:03.1220900 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Yiqun Zhao 1 Libin Tang 2 Shengyi Yang 3 Vincent Teng 0000-0003-4325-8573 4 Shu Ping Lau 5 53363__16442__5606168d843f45e79d480328def8739e.pdf zhao2020.pdf 2020-01-27T10:17:27.6554114 Output 1251004 application/pdf Accepted Manuscript true 2021-02-19T00:00:00.0000000 true eng
title Infrared photodetector based on GeTe nanofilms with high performance
spellingShingle Infrared photodetector based on GeTe nanofilms with high performance
Vincent Teng
title_short Infrared photodetector based on GeTe nanofilms with high performance
title_full Infrared photodetector based on GeTe nanofilms with high performance
title_fullStr Infrared photodetector based on GeTe nanofilms with high performance
title_full_unstemmed Infrared photodetector based on GeTe nanofilms with high performance
title_sort Infrared photodetector based on GeTe nanofilms with high performance
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 Yiqun Zhao
Libin Tang
Shengyi Yang
Vincent Teng
Shu Ping Lau
format Journal article
container_title Optics Letters
container_volume 45
container_issue 5
container_start_page 1108
publishDate 2020
institution Swansea University
issn 0146-9592
1539-4794
doi_str_mv 10.1364/ol.385280
publisher Optica Publishing Group
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing. High-performance photodetectors with detectivity of ∼1013 Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work.
published_date 2020-03-01T06:03:01Z
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score 11.088929

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