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Infrared photodetector based on GeTe nanofilms with high performance
Optics Letters, Volume: 45, Issue: 5, Start page: 1108
Swansea University Author:
Vincent Teng
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DOI (Published version): 10.1364/ol.385280
Abstract
GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputteri...
Published in: | Optics Letters |
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ISSN: | 0146-9592 1539-4794 |
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The Optical Society
2020
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URI: | https://cronfa.swan.ac.uk/Record/cronfa53363 |
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2020-01-27T10:16:03.1220900 v2 53363 2020-01-27 Infrared photodetector based on GeTe nanofilms with high performance 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2020-01-27 EEEG GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing. High-performance photodetectors with detectivity of ∼1013 Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work. Journal Article Optics Letters 45 5 1108 The Optical Society 0146-9592 1539-4794 1 3 2020 2020-03-01 10.1364/ol.385280 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-01-27T10:16:03.1220900 2020-01-27T10:16:03.1220900 Yiqun Zhao 1 Libin Tang 2 Shengyi Yang 3 Vincent Teng 0000-0003-4325-8573 4 Shu Ping Lau 5 53363__16442__5606168d843f45e79d480328def8739e.pdf zhao2020.pdf 2020-01-27T10:17:27.6554114 Output 1251004 application/pdf Accepted Manuscript true 2021-02-19T00:00:00.0000000 true eng |
title |
Infrared photodetector based on GeTe nanofilms with high performance |
spellingShingle |
Infrared photodetector based on GeTe nanofilms with high performance Vincent Teng |
title_short |
Infrared photodetector based on GeTe nanofilms with high performance |
title_full |
Infrared photodetector based on GeTe nanofilms with high performance |
title_fullStr |
Infrared photodetector based on GeTe nanofilms with high performance |
title_full_unstemmed |
Infrared photodetector based on GeTe nanofilms with high performance |
title_sort |
Infrared photodetector based on GeTe nanofilms with high performance |
author_id_str_mv |
98f529f56798da1ba3e6e93d2817c114 |
author_id_fullname_str_mv |
98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng |
author |
Vincent Teng |
author2 |
Yiqun Zhao Libin Tang Shengyi Yang Vincent Teng Shu Ping Lau |
format |
Journal article |
container_title |
Optics Letters |
container_volume |
45 |
container_issue |
5 |
container_start_page |
1108 |
publishDate |
2020 |
institution |
Swansea University |
issn |
0146-9592 1539-4794 |
doi_str_mv |
10.1364/ol.385280 |
publisher |
The Optical Society |
document_store_str |
1 |
active_str |
0 |
description |
GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing. High-performance photodetectors with detectivity of ∼1013 Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work. |
published_date |
2020-03-01T04:06:16Z |
_version_ |
1763753461268086784 |
score |
11.021648 |