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Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
Nanoscale Research Letters, Volume: 15, Issue: 1
Swansea University Author:
Vincent Teng
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DOI (Published version): 10.1186/s11671-020-03336-7
Abstract
GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofi...
| Published in: | Nanoscale Research Letters |
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| ISSN: | 1556-276X |
| Published: |
Springer Science and Business Media LLC
2020
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa54083 |
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| Abstract: |
GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 1011 Jones at 850 nm light irradiation at room temperature was demonstrated. |
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| Keywords: |
GeTe, Heterojunction, Optoelectronic characteristics, Photovoltaic detector |
| Issue: |
1 |