No Cover Image

Journal article 704 views 111 downloads

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Yiqun Zhao, Libin Tang, Shengyi Yang, Shu Ping Lau, Vincent Teng Orcid Logo

Nanoscale Research Letters, Volume: 15, Issue: 1

Swansea University Author: Vincent Teng Orcid Logo

  • 54083.pdf

    PDF | Version of Record

    Released under the terms of a Creative Commons Attribution 4.0 International License (CC-BY).

    Download (1.48MB)

Check full text

DOI (Published version): 10.1186/s11671-020-03336-7

Abstract

GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofi...

Full description

Published in: Nanoscale Research Letters
ISSN: 1556-276X
Published: Springer Science and Business Media LLC 2020
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa54083
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2020-04-29T13:22:32Z
last_indexed 2020-07-10T13:16:48Z
id cronfa54083
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2020-07-10T11:41:54.6618922</datestamp><bib-version>v2</bib-version><id>54083</id><entry>2020-04-29</entry><title>Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction</title><swanseaauthors><author><sid>98f529f56798da1ba3e6e93d2817c114</sid><ORCID>0000-0003-4325-8573</ORCID><firstname>Vincent</firstname><surname>Teng</surname><name>Vincent Teng</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2020-04-29</date><deptcode>EEEG</deptcode><abstract>GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 &#xD7; 1011 Jones at 850&#x2009;nm light irradiation at room temperature was demonstrated.</abstract><type>Journal Article</type><journal>Nanoscale Research Letters</journal><volume>15</volume><journalNumber>1</journalNumber><publisher>Springer Science and Business Media LLC</publisher><issnElectronic>1556-276X</issnElectronic><keywords>GeTe, Heterojunction, Optoelectronic characteristics, Photovoltaic detector</keywords><publishedDay>29</publishedDay><publishedMonth>6</publishedMonth><publishedYear>2020</publishedYear><publishedDate>2020-06-29</publishedDate><doi>10.1186/s11671-020-03336-7</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2020-07-10T11:41:54.6618922</lastEdited><Created>2020-04-29T11:35:02.7417594</Created><authors><author><firstname>Yiqun</firstname><surname>Zhao</surname><order>1</order></author><author><firstname>Libin</firstname><surname>Tang</surname><order>2</order></author><author><firstname>Shengyi</firstname><surname>Yang</surname><order>3</order></author><author><firstname>Shu Ping</firstname><surname>Lau</surname><order>4</order></author><author><firstname>Vincent</firstname><surname>Teng</surname><orcid>0000-0003-4325-8573</orcid><order>5</order></author></authors><documents><document><filename>54083__17665__96763133dfac48eab1f856d1e13a1beb.pdf</filename><originalFilename>54083.pdf</originalFilename><uploaded>2020-07-07T12:04:48.1143665</uploaded><type>Output</type><contentLength>1552886</contentLength><contentType>application/pdf</contentType><version>Version of Record</version><cronfaStatus>true</cronfaStatus><documentNotes>Released under the terms of a Creative Commons Attribution 4.0 International License (CC-BY).</documentNotes><copyrightCorrect>true</copyrightCorrect><language>eng</language><licence>http://creativecommons.org/licenses/by/4.0/</licence></document></documents><OutputDurs/></rfc1807>
spelling 2020-07-10T11:41:54.6618922 v2 54083 2020-04-29 Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2020-04-29 EEEG GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 1011 Jones at 850 nm light irradiation at room temperature was demonstrated. Journal Article Nanoscale Research Letters 15 1 Springer Science and Business Media LLC 1556-276X GeTe, Heterojunction, Optoelectronic characteristics, Photovoltaic detector 29 6 2020 2020-06-29 10.1186/s11671-020-03336-7 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-07-10T11:41:54.6618922 2020-04-29T11:35:02.7417594 Yiqun Zhao 1 Libin Tang 2 Shengyi Yang 3 Shu Ping Lau 4 Vincent Teng 0000-0003-4325-8573 5 54083__17665__96763133dfac48eab1f856d1e13a1beb.pdf 54083.pdf 2020-07-07T12:04:48.1143665 Output 1552886 application/pdf Version of Record true Released under the terms of a Creative Commons Attribution 4.0 International License (CC-BY). true eng http://creativecommons.org/licenses/by/4.0/
title Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
spellingShingle Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
Vincent Teng
title_short Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
title_full Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
title_fullStr Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
title_full_unstemmed Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
title_sort Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 Yiqun Zhao
Libin Tang
Shengyi Yang
Shu Ping Lau
Vincent Teng
format Journal article
container_title Nanoscale Research Letters
container_volume 15
container_issue 1
publishDate 2020
institution Swansea University
issn 1556-276X
doi_str_mv 10.1186/s11671-020-03336-7
publisher Springer Science and Business Media LLC
document_store_str 1
active_str 0
description GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 1011 Jones at 850 nm light irradiation at room temperature was demonstrated.
published_date 2020-06-29T04:07:24Z
_version_ 1763753532538748928
score 11.016258

Similar Items