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A new opportunity for the emerging tellurium semiconductor: making resistive switching devices

Yifei Yang, Mingkun Xu, Shujing Jia, Bolun Wang, Lujie Xu, Xinxin Wang, Huan Liu, Yuanshuang Liu, Yuzheng Guo Orcid Logo, Lidan Wang, Shukai Duan, Kai Liu, Min Zhu, Jing Pei, Wenrui Duan, Dameng Liu, Huanglong Li

Nature Communications, Volume: 12, Issue: 1, Start page: 6081

Swansea University Author: Yuzheng Guo Orcid Logo

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DOI (Published version): 10.1038/s41467-021-26399-1

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Abstract: The development of the resistive switching cross-point array as the next-generation platform for high-density storage, in-memory computing and neuromorphic computing heavily relies on the improvement of the two component devices, volatile selector and nonvolatile memory, which have distinc...

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Published in: Nature Communications
ISSN: 2041-1723
Published: Springer Science and Business Media LLC 2021
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URI: https://cronfa.swan.ac.uk/Record/cronfa58434
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The perennial current-volatility dilemma that has been widely faced in various device implementations remains a major bottleneck. Here, we show that the device based on electrochemically active, low-thermal conductivity and low-melting temperature semiconducting tellurium filament can solve this dilemma, being able to function as either selector or memory in respective desired current ranges. Furthermore, we demonstrate one-selector-one-resistor behavior in a tandem of two identical Te-based devices, indicating the potential of Te-based device as a universal array building block. These nonconventional phenomena can be understood from a combination of unique electrical-thermal properties in Te. 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spelling 2021-11-17T16:33:24.1228393 v2 58434 2021-10-20 A new opportunity for the emerging tellurium semiconductor: making resistive switching devices 2c285ab01f88f7ecb25a3aacabee52ea 0000-0003-2656-0340 Yuzheng Guo Yuzheng Guo true false 2021-10-20 GENG Abstract: The development of the resistive switching cross-point array as the next-generation platform for high-density storage, in-memory computing and neuromorphic computing heavily relies on the improvement of the two component devices, volatile selector and nonvolatile memory, which have distinct operating current requirements. The perennial current-volatility dilemma that has been widely faced in various device implementations remains a major bottleneck. Here, we show that the device based on electrochemically active, low-thermal conductivity and low-melting temperature semiconducting tellurium filament can solve this dilemma, being able to function as either selector or memory in respective desired current ranges. Furthermore, we demonstrate one-selector-one-resistor behavior in a tandem of two identical Te-based devices, indicating the potential of Te-based device as a universal array building block. These nonconventional phenomena can be understood from a combination of unique electrical-thermal properties in Te. Preliminary device optimization efforts also indicate large and unique design space for Te-based resistive switching devices. Journal Article Nature Communications 12 1 6081 Springer Science and Business Media LLC 2041-1723 19 10 2021 2021-10-19 10.1038/s41467-021-26399-1 COLLEGE NANME General Engineering COLLEGE CODE GENG Swansea University National Natural Science Foundation of China (National Science Foundation of China) Grant: 61974082 2021-11-17T16:33:24.1228393 2021-10-20T13:18:13.6324660 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering Yifei Yang 1 Mingkun Xu 2 Shujing Jia 3 Bolun Wang 4 Lujie Xu 5 Xinxin Wang 6 Huan Liu 7 Yuanshuang Liu 8 Yuzheng Guo 0000-0003-2656-0340 9 Lidan Wang 10 Shukai Duan 11 Kai Liu 12 Min Zhu 13 Jing Pei 14 Wenrui Duan 15 Dameng Liu 16 Huanglong Li 17 58434__21240__235b21eaf091451db201882d1c0a4516.pdf 58434.pdf 2021-10-20T13:20:10.6949304 Output 3437196 application/pdf Version of Record true © The Author(s) 2021. This article is licensed under a Creative Commons Attribution 4.0 International License true eng http://creativecommons.org/licenses/by/4.0/
title A new opportunity for the emerging tellurium semiconductor: making resistive switching devices
spellingShingle A new opportunity for the emerging tellurium semiconductor: making resistive switching devices
Yuzheng Guo
title_short A new opportunity for the emerging tellurium semiconductor: making resistive switching devices
title_full A new opportunity for the emerging tellurium semiconductor: making resistive switching devices
title_fullStr A new opportunity for the emerging tellurium semiconductor: making resistive switching devices
title_full_unstemmed A new opportunity for the emerging tellurium semiconductor: making resistive switching devices
title_sort A new opportunity for the emerging tellurium semiconductor: making resistive switching devices
author_id_str_mv 2c285ab01f88f7ecb25a3aacabee52ea
author_id_fullname_str_mv 2c285ab01f88f7ecb25a3aacabee52ea_***_Yuzheng Guo
author Yuzheng Guo
author2 Yifei Yang
Mingkun Xu
Shujing Jia
Bolun Wang
Lujie Xu
Xinxin Wang
Huan Liu
Yuanshuang Liu
Yuzheng Guo
Lidan Wang
Shukai Duan
Kai Liu
Min Zhu
Jing Pei
Wenrui Duan
Dameng Liu
Huanglong Li
format Journal article
container_title Nature Communications
container_volume 12
container_issue 1
container_start_page 6081
publishDate 2021
institution Swansea University
issn 2041-1723
doi_str_mv 10.1038/s41467-021-26399-1
publisher Springer Science and Business Media LLC
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering
document_store_str 1
active_str 0
description Abstract: The development of the resistive switching cross-point array as the next-generation platform for high-density storage, in-memory computing and neuromorphic computing heavily relies on the improvement of the two component devices, volatile selector and nonvolatile memory, which have distinct operating current requirements. The perennial current-volatility dilemma that has been widely faced in various device implementations remains a major bottleneck. Here, we show that the device based on electrochemically active, low-thermal conductivity and low-melting temperature semiconducting tellurium filament can solve this dilemma, being able to function as either selector or memory in respective desired current ranges. Furthermore, we demonstrate one-selector-one-resistor behavior in a tandem of two identical Te-based devices, indicating the potential of Te-based device as a universal array building block. These nonconventional phenomena can be understood from a combination of unique electrical-thermal properties in Te. Preliminary device optimization efforts also indicate large and unique design space for Te-based resistive switching devices.
published_date 2021-10-19T04:14:57Z
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score 11.012678

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