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Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors
Hongfei Li,
Yuzheng Guo 
,
John Robertson
,
John Robertson
Scientific Reports, Volume: 7, Issue: 1
Swansea University Author:
Yuzheng Guo
-
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DOI (Published version): 10.1038/s41598-017-17290-5
Abstract
Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. Using amorphous ZnO as a simplified model system, we show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to...
| Published in: | Scientific Reports |
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| ISSN: | 2045-2322 |
| Published: |
2017
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa37787 |
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| Abstract: |
Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. Using amorphous ZnO as a simplified model system, we show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to create filled defect gap states lying just above the valence band edge and they are shown to give a consistent mechanism to explain the negative bias illumination stress instability found in oxide semiconductors like In-Ga-Zn-O (IGZO). |
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| Keywords: |
Electrical and electronic engineering, Electronic properties and materials |
| College: |
Faculty of Science and Engineering |
| Issue: |
1 |