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Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors

Hongfei Li, Yuzheng Guo Orcid Logo, John Robertson

Scientific Reports, Volume: 7, Issue: 1

Swansea University Author: Yuzheng Guo Orcid Logo

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DOI (Published version): 10.1038/s41598-017-17290-5

Abstract

Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. Using amorphous ZnO as a simplified model system, we show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to...

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Published in: Scientific Reports
ISSN: 2045-2322
Published: 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa37787
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first_indexed 2018-01-02T20:07:43Z
last_indexed 2018-02-27T19:46:24Z
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spelling 2018-02-27T14:41:50.4151687 v2 37787 2018-01-02 Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors 2c285ab01f88f7ecb25a3aacabee52ea 0000-0003-2656-0340 Yuzheng Guo Yuzheng Guo true false 2018-01-02 GENG Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. Using amorphous ZnO as a simplified model system, we show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to create filled defect gap states lying just above the valence band edge and they are shown to give a consistent mechanism to explain the negative bias illumination stress instability found in oxide semiconductors like In-Ga-Zn-O (IGZO). Journal Article Scientific Reports 7 1 2045-2322 Electrical and electronic engineering, Electronic properties and materials 4 12 2017 2017-12-04 10.1038/s41598-017-17290-5 COLLEGE NANME General Engineering COLLEGE CODE GENG Swansea University 2018-02-27T14:41:50.4151687 2018-01-02T14:01:01.5445052 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering Hongfei Li 1 Yuzheng Guo 0000-0003-2656-0340 2 John Robertson 3 0037787-02012018140349.pdf li2017(2)v2.pdf 2018-01-02T14:03:49.0770000 Output 3105326 application/pdf Version of Record true 2018-01-02T00:00:00.0000000 true eng
title Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors
spellingShingle Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors
Yuzheng Guo
title_short Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors
title_full Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors
title_fullStr Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors
title_full_unstemmed Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors
title_sort Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors
author_id_str_mv 2c285ab01f88f7ecb25a3aacabee52ea
author_id_fullname_str_mv 2c285ab01f88f7ecb25a3aacabee52ea_***_Yuzheng Guo
author Yuzheng Guo
author2 Hongfei Li
Yuzheng Guo
John Robertson
format Journal article
container_title Scientific Reports
container_volume 7
container_issue 1
publishDate 2017
institution Swansea University
issn 2045-2322
doi_str_mv 10.1038/s41598-017-17290-5
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering
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description Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. Using amorphous ZnO as a simplified model system, we show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to create filled defect gap states lying just above the valence band edge and they are shown to give a consistent mechanism to explain the negative bias illumination stress instability found in oxide semiconductors like In-Ga-Zn-O (IGZO).
published_date 2017-12-04T03:47:38Z
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