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Investigation into the manipulation of non-uniformity and undercut features of a positive profile through silicon via / PAUL GRAY

Swansea University Author: PAUL GRAY

DOI (Published version): 10.23889/SUthesis.60413

Abstract

The key enabling technology for 2.5D and 3D packaging applications is the through silicon via (TSV), this device allows integrated circuits and additional component layers to be vertically stacked, this minimises internal signalling lengths allowing for faster operation, reduced heat production and...

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Published: Swansea 2022
Institution: Swansea University
Degree level: Doctoral
Degree name: Ph.D
Supervisor: Li, Lijie
URI: https://cronfa.swan.ac.uk/Record/cronfa60413
first_indexed 2022-07-08T10:48:55Z
last_indexed 2023-01-13T19:20:31Z
id cronfa60413
recordtype RisThesis
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spelling 2022-07-08T12:04:43.1812876 v2 60413 2022-07-08 Investigation into the manipulation of non-uniformity and undercut features of a positive profile through silicon via 0a08eacca92895fe711edbd8b283957c PAUL GRAY PAUL GRAY true false 2022-07-08 The key enabling technology for 2.5D and 3D packaging applications is the through silicon via (TSV), this device allows integrated circuits and additional component layers to be vertically stacked, this minimises internal signalling lengths allowing for faster operation, reduced heat production and lower power consumption. TSV’s are commonly formed with a positive profile structure which minimises conductor deposition defects in downstream production stages. This research was carried out on an SPTS Technologies Ltd Pegasus™ deep silicon etcher employing a single step O2/SF6/Ar process. The aim was to identify a predictable set of process parameters that can be used manipulate the dimensions of the ‘undercut’ feature that regularly forms at the top of the TSV profile during dry plasma etch processing. An L16 (4^5) Taguchi Array was used to determine the interaction effects of changing five critical process parameters on the undercut feature dimensions. The results from the process sample runs were analysed using commercially available statistical analysis software to investigate any predictable interactions between process parameter values and TSV profile dimensions. The outcome showed that there were no relationships that would facilitate predictable manipulation of the undercut dimensions. However, a clear and predictable trend was observed from the results which showed that increasing the wafer platform temperature results in a decrease in across wafer non-uniformity of critical TSV profile dimensions. E-Thesis Swansea Through Silicon Via, TSV, Positive Profile, Etching, Plasma Etch 7 7 2022 2022-07-07 10.23889/SUthesis.60413 ORCiD identifier: https://orcid.org/0000-0003-1153-5513 COLLEGE NANME COLLEGE CODE Swansea University Li, Lijie Doctoral Ph.D SPTS Technologies Limited 2022-07-08T12:04:43.1812876 2022-07-08T11:41:29.5610713 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised PAUL GRAY 1 60413__24504__f887cc086e3e43038370aec84b1555e8.pdf Gray_Paul_PhD_Thesis_Final_Redacted_Signature.pdf 2022-07-08T11:59:04.8908032 Output 3515689 application/pdf E-Thesis – open access true Copyright: The author, Paul Gray, 2022. true eng
title Investigation into the manipulation of non-uniformity and undercut features of a positive profile through silicon via
spellingShingle Investigation into the manipulation of non-uniformity and undercut features of a positive profile through silicon via
PAUL GRAY
title_short Investigation into the manipulation of non-uniformity and undercut features of a positive profile through silicon via
title_full Investigation into the manipulation of non-uniformity and undercut features of a positive profile through silicon via
title_fullStr Investigation into the manipulation of non-uniformity and undercut features of a positive profile through silicon via
title_full_unstemmed Investigation into the manipulation of non-uniformity and undercut features of a positive profile through silicon via
title_sort Investigation into the manipulation of non-uniformity and undercut features of a positive profile through silicon via
author_id_str_mv 0a08eacca92895fe711edbd8b283957c
author_id_fullname_str_mv 0a08eacca92895fe711edbd8b283957c_***_PAUL GRAY
author PAUL GRAY
author2 PAUL GRAY
format E-Thesis
publishDate 2022
institution Swansea University
doi_str_mv 10.23889/SUthesis.60413
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
document_store_str 1
active_str 0
description The key enabling technology for 2.5D and 3D packaging applications is the through silicon via (TSV), this device allows integrated circuits and additional component layers to be vertically stacked, this minimises internal signalling lengths allowing for faster operation, reduced heat production and lower power consumption. TSV’s are commonly formed with a positive profile structure which minimises conductor deposition defects in downstream production stages. This research was carried out on an SPTS Technologies Ltd Pegasus™ deep silicon etcher employing a single step O2/SF6/Ar process. The aim was to identify a predictable set of process parameters that can be used manipulate the dimensions of the ‘undercut’ feature that regularly forms at the top of the TSV profile during dry plasma etch processing. An L16 (4^5) Taguchi Array was used to determine the interaction effects of changing five critical process parameters on the undercut feature dimensions. The results from the process sample runs were analysed using commercially available statistical analysis software to investigate any predictable interactions between process parameter values and TSV profile dimensions. The outcome showed that there were no relationships that would facilitate predictable manipulation of the undercut dimensions. However, a clear and predictable trend was observed from the results which showed that increasing the wafer platform temperature results in a decrease in across wafer non-uniformity of critical TSV profile dimensions.
published_date 2022-07-07T05:02:38Z
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score 11.099813

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