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Synthesis of β-Ga2O3 thin film assisted by microwave annealing

Nafiseh Badiei, AFSHIN TARAT, Lijie Li Orcid Logo

AIP Advances, Volume: 12, Issue: 8, Start page: 085118

Swansea University Authors: Nafiseh Badiei, AFSHIN TARAT, Lijie Li Orcid Logo

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DOI (Published version): 10.1063/5.0110530

Abstract

β-Ga2O3 is increasingly being used in power electronics and UV sensors. The preparation of β-Ga2O3 thin films requires costly and time-consuming fabrication processes. Therefore, developing short-time and low-cost fabrication processes of the β-Ga2O3 thin film has been greatly demanded to quicken th...

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Published in: AIP Advances
ISSN: 2158-3226
Published: AIP Publishing 2022
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URI: https://cronfa.swan.ac.uk/Record/cronfa60786
first_indexed 2022-08-24T11:21:51Z
last_indexed 2024-11-14T12:17:58Z
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spelling 2023-06-13T15:08:19.7919262 v2 60786 2022-08-10 Synthesis of β-Ga2O3 thin film assisted by microwave annealing c82cd1b82759801ab0045cb9f0047b06 Nafiseh Badiei Nafiseh Badiei true false e95135dda1be4a1731df5caad8062f71 AFSHIN TARAT AFSHIN TARAT true false ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2022-08-10 β-Ga2O3 is increasingly being used in power electronics and UV sensors. The preparation of β-Ga2O3 thin films requires costly and time-consuming fabrication processes. Therefore, developing short-time and low-cost fabrication processes of the β-Ga2O3 thin film has been greatly demanded to quicken the pace of applying this material in practical devices and systems. In this paper, a new fabrication process combining physical vapor deposition and microwave localized annealing has been postulated for β-Ga2O3 thin films. The experimental results show that after microwave annealing band gaps have been slightly adjusted, the surface morphology has been improved and extra diffraction peaks appear, which give rise to stronger β-phase characteristics in the Ga2O3 thin film. Calculation based on density functional theory has been conducted to show the electronic band structures, formation energies, and optical absorptions of both types. Journal Article AIP Advances 12 8 085118 AIP Publishing 2158-3226 23 8 2022 2022-08-23 10.1063/5.0110530 COLLEGE NANME COLLEGE CODE Swansea University External research funder(s) paid the OA fee (includes OA grants disbursed by the Library) The authors acknowledge the support from the European Regional Development Fund (ERDF) for funding the Solar Photovoltaic Academic Research Consortium (SPARC II), and the EPSRC Project (Grant No. EP/T019085/1). 2023-06-13T15:08:19.7919262 2022-08-10T15:54:39.4774009 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Nafiseh Badiei 1 AFSHIN TARAT 2 Lijie Li 0000-0003-4630-7692 3 60786__25007__95a45c82df4948c0a3e5bf3c0c2967c9.pdf 60786_VoR.pdf 2022-08-24T12:22:19.0806229 Output 6054196 application/pdf Version of Record true © 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license true eng http://creativecommons.org/licenses/by/4.0/
title Synthesis of β-Ga2O3 thin film assisted by microwave annealing
spellingShingle Synthesis of β-Ga2O3 thin film assisted by microwave annealing
Nafiseh Badiei
AFSHIN TARAT
Lijie Li
title_short Synthesis of β-Ga2O3 thin film assisted by microwave annealing
title_full Synthesis of β-Ga2O3 thin film assisted by microwave annealing
title_fullStr Synthesis of β-Ga2O3 thin film assisted by microwave annealing
title_full_unstemmed Synthesis of β-Ga2O3 thin film assisted by microwave annealing
title_sort Synthesis of β-Ga2O3 thin film assisted by microwave annealing
author_id_str_mv c82cd1b82759801ab0045cb9f0047b06
e95135dda1be4a1731df5caad8062f71
ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv c82cd1b82759801ab0045cb9f0047b06_***_Nafiseh Badiei
e95135dda1be4a1731df5caad8062f71_***_AFSHIN TARAT
ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Nafiseh Badiei
AFSHIN TARAT
Lijie Li
author2 Nafiseh Badiei
AFSHIN TARAT
Lijie Li
format Journal article
container_title AIP Advances
container_volume 12
container_issue 8
container_start_page 085118
publishDate 2022
institution Swansea University
issn 2158-3226
doi_str_mv 10.1063/5.0110530
publisher AIP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
document_store_str 1
active_str 0
description β-Ga2O3 is increasingly being used in power electronics and UV sensors. The preparation of β-Ga2O3 thin films requires costly and time-consuming fabrication processes. Therefore, developing short-time and low-cost fabrication processes of the β-Ga2O3 thin film has been greatly demanded to quicken the pace of applying this material in practical devices and systems. In this paper, a new fabrication process combining physical vapor deposition and microwave localized annealing has been postulated for β-Ga2O3 thin films. The experimental results show that after microwave annealing band gaps have been slightly adjusted, the surface morphology has been improved and extra diffraction peaks appear, which give rise to stronger β-phase characteristics in the Ga2O3 thin film. Calculation based on density functional theory has been conducted to show the electronic band structures, formation energies, and optical absorptions of both types.
published_date 2022-08-23T05:15:10Z
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score 11.390808

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