Thickness Effect on the Solid-State Reaction of a Ni/GaAs System

Rabhi, Selma; Oueldna, Nouredine; Perrin-Pellegrino, Carine; Portavoce, Alain; Kalna, Karol; Benoudia, Mohamed Cherif; Hoummada, Khalid

doi:10.3390/nano12152633

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Thickness Effect on the Solid-State Reaction of a Ni/GaAs System

Selma Rabhi, Nouredine Oueldna

, Carine Perrin-Pellegrino, Alain Portavoce, Karol Kalna

, Mohamed Cherif Benoudia

, Khalid Hoummada

Nanomaterials, Volume: 12, Issue: 15, Start page: 2633

Swansea University Author: Karol Kalna

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DOI (Published version): 10.3390/nano12152633

Abstract

Ni thin films with different thicknesses were grown on a GaAs substrate using the magnetron sputtering technique followed by in situ X-ray diffraction (XRD) annealing in order to study the solid-state reaction between Ni and GaAs substrate. The thickness dependence on the formation of the intermetal...

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Published in:	Nanomaterials
ISSN:	2079-4991
Published:	MDPI AG 2022
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa61169
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spelling	2022-10-06T15:39:39.7319442 v2 61169 2022-09-09 Thickness Effect on the Solid-State Reaction of a Ni/GaAs System 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2022-09-09 EEEG Ni thin films with different thicknesses were grown on a GaAs substrate using the magnetron sputtering technique followed by in situ X-ray diffraction (XRD) annealing in order to study the solid-state reaction between Ni and GaAs substrate. The thickness dependence on the formation of the intermetallic phases was investigated using in situ and ex situ XRD, pole figures, and atom probe tomography (APT). The results indicate that the 20 nm-thick Ni film exhibits an epitaxial relation with the GaAs substrate, which is (001) Ni//(001) GaAs and [111] Ni//[110] GaAs after deposition. Increasing the film’s thickness results in a change of the Ni film’s texture. This difference has an impact on the formation temperature of Ni3GaAs. This temperature decreases simultaneously with the thickness increase. This is due to the coherent/incoherent nature of the initial Ni/GaAs interface. The Ni3GaAs phase decomposes into the binary and ternary compounds xNiAs and Ni3−xGaAs1−x at about 400 °C. Similarly to Ni3GaAs, the decomposition temperature of the second phase also depends on the initial thickness of the Ni layer. Journal Article Nanomaterials 12 15 2633 MDPI AG 2079-4991 solid-state reaction; thickness; Ni-thin films; III-IV semi-conductors; in situ X-ray diffraction; intermetallic growth 30 7 2022 2022-07-30 10.3390/nano12152633 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University This research was funded by Campus France PHC Toubkal—grant number: TBK 18/65, PHC Tassili—grant number: 7MDU994, and “The APC was funded by Aix-Marseille University”. 2022-10-06T15:39:39.7319442 2022-09-09T14:34:12.4996184 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Selma Rabhi 1 Nouredine Oueldna 0000-0002-6127-0712 2 Carine Perrin-Pellegrino 3 Alain Portavoce 4 Karol Kalna 0000-0002-6333-9189 5 Mohamed Cherif Benoudia 0000-0002-7506-256x 6 Khalid Hoummada 7 61169__25337__68a4ee1d498c4d14a980fdde1d3e7d25.pdf 61169_VoR.pdf 2022-10-06T15:35:10.8314822 Output 4420361 application/pdf Version of Record true © 2022 by the authors. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license true eng https://creativecommons.org/licenses/by/4.0/
title	Thickness Effect on the Solid-State Reaction of a Ni/GaAs System
spellingShingle	Thickness Effect on the Solid-State Reaction of a Ni/GaAs System Karol Kalna
title_short	Thickness Effect on the Solid-State Reaction of a Ni/GaAs System
title_full	Thickness Effect on the Solid-State Reaction of a Ni/GaAs System
title_fullStr	Thickness Effect on the Solid-State Reaction of a Ni/GaAs System
title_full_unstemmed	Thickness Effect on the Solid-State Reaction of a Ni/GaAs System
title_sort	Thickness Effect on the Solid-State Reaction of a Ni/GaAs System
author_id_str_mv	1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv	1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author	Karol Kalna
author2	Selma Rabhi Nouredine Oueldna Carine Perrin-Pellegrino Alain Portavoce Karol Kalna Mohamed Cherif Benoudia Khalid Hoummada
format	Journal article
container_title	Nanomaterials
container_volume	12
container_issue	15
container_start_page	2633
publishDate	2022
institution	Swansea University
issn	2079-4991
doi_str_mv	10.3390/nano12152633
publisher	MDPI AG
college_str	Faculty of Science and Engineering
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hierarchy_top_id	facultyofscienceandengineering
hierarchy_top_title	Faculty of Science and Engineering
hierarchy_parent_id	facultyofscienceandengineering
hierarchy_parent_title	Faculty of Science and Engineering
department_str	School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str	1
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description	Ni thin films with different thicknesses were grown on a GaAs substrate using the magnetron sputtering technique followed by in situ X-ray diffraction (XRD) annealing in order to study the solid-state reaction between Ni and GaAs substrate. The thickness dependence on the formation of the intermetallic phases was investigated using in situ and ex situ XRD, pole figures, and atom probe tomography (APT). The results indicate that the 20 nm-thick Ni film exhibits an epitaxial relation with the GaAs substrate, which is (001) Ni//(001) GaAs and [111] Ni//[110] GaAs after deposition. Increasing the film’s thickness results in a change of the Ni film’s texture. This difference has an impact on the formation temperature of Ni3GaAs. This temperature decreases simultaneously with the thickness increase. This is due to the coherent/incoherent nature of the initial Ni/GaAs interface. The Ni3GaAs phase decomposes into the binary and ternary compounds xNiAs and Ni3−xGaAs1−x at about 400 °C. Similarly to Ni3GaAs, the decomposition temperature of the second phase also depends on the initial thickness of the Ni layer.
published_date	2022-07-30T04:19:49Z
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score	11.016235

Thickness Effect on the Solid-State Reaction of a Ni/GaAs System

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