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Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening

José M Iglesias Orcid Logo, Alejandra Nardone, Raúl Rengel Orcid Logo, Karol Kalna Orcid Logo, María J Martín, Elena Pascual Orcid Logo

2D Materials, Volume: 10, Issue: 2, Start page: 025011

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1088/2053-1583/acb1c2

Abstract

The effect of degeneracy and the impact of free-carrier screening on a low-field mobility and a high-field drift velocity in MoS2 and WS2 are explored using an in-house ensemble Monte Carlo simulator. Electron low field mobility increases to 8400 c m 2 V − 1 s − 1 for MoS2 and to 12 040 c m 2 V − 1...

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Published in: 2D Materials
ISSN: 2053-1583
Published: IOP Publishing 2023
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URI: https://cronfa.swan.ac.uk/Record/cronfa62671
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spelling 2023-03-09T14:54:07.9595305 v2 62671 2023-02-16 Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2023-02-16 EEEG The effect of degeneracy and the impact of free-carrier screening on a low-field mobility and a high-field drift velocity in MoS2 and WS2 are explored using an in-house ensemble Monte Carlo simulator. Electron low field mobility increases to 8400 c m 2 V − 1 s − 1 for MoS2 and to 12 040 c m 2 V − 1 s − 1 for WS2 when temperature decreases to 77 K and carrier concentration is around 5 × 10 12 c m − 2 . In the case of holes, best mobility values were 9 320 c m 2 V − 1 s − 1 and 13 290 c m 2 V − 1 s − 1 , reached at similar temperature and carrier concentration conditions while at room temperature these fall to 80 c m 2 V − 1 s − 1 and 150 c m 2 V − 1 s − 1 for MoS2 and WS2, respectively. The carrier screening effect plays a major role at low fields, and low and intermediate temperatures, where a combination of large occupancy of primary valleys and carrier-phonon interactions dominated by relatively low energy exchange processes results in an enhanced screening of intrinsic scattering. For electrons, degeneracy yields to transport in secondary valleys, which plays an important role in the decrease of the low field mobility at high concentrations and/or at room temperature. The high-field drift velocity is not much affected by carrier screening because of an increased carrier scattering with surface optical polar phonons, favouring larger phonon wavevector interactions with small dielectric function values. Journal Article 2D Materials 10 2 025011 IOP Publishing 2053-1583 1 4 2023 2023-04-01 10.1088/2053-1583/acb1c2 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2023-03-09T14:54:07.9595305 2023-02-16T08:59:30.6267158 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering José M Iglesias 0000-0003-0834-1435 1 Alejandra Nardone 2 Raúl Rengel 0000-0003-4976-2244 3 Karol Kalna 0000-0002-6333-9189 4 María J Martín 5 Elena Pascual 0000-0002-4771-9042 6 Under embargo Under embargo 2023-02-16T13:43:34.5456402 Output 429979 application/pdf Accepted Manuscript true 2024-02-01T00:00:00.0000000 ©2023 All rights reserved. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution Non-Commercial No Derivatives License (CC-BY-NC-ND) true eng https://creativecommons.org/licenses/by-nc-nd/4.0/
title Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening
spellingShingle Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening
Karol Kalna
title_short Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening
title_full Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening
title_fullStr Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening
title_full_unstemmed Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening
title_sort Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 José M Iglesias
Alejandra Nardone
Raúl Rengel
Karol Kalna
María J Martín
Elena Pascual
format Journal article
container_title 2D Materials
container_volume 10
container_issue 2
container_start_page 025011
publishDate 2023
institution Swansea University
issn 2053-1583
doi_str_mv 10.1088/2053-1583/acb1c2
publisher IOP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
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description The effect of degeneracy and the impact of free-carrier screening on a low-field mobility and a high-field drift velocity in MoS2 and WS2 are explored using an in-house ensemble Monte Carlo simulator. Electron low field mobility increases to 8400 c m 2 V − 1 s − 1 for MoS2 and to 12 040 c m 2 V − 1 s − 1 for WS2 when temperature decreases to 77 K and carrier concentration is around 5 × 10 12 c m − 2 . In the case of holes, best mobility values were 9 320 c m 2 V − 1 s − 1 and 13 290 c m 2 V − 1 s − 1 , reached at similar temperature and carrier concentration conditions while at room temperature these fall to 80 c m 2 V − 1 s − 1 and 150 c m 2 V − 1 s − 1 for MoS2 and WS2, respectively. The carrier screening effect plays a major role at low fields, and low and intermediate temperatures, where a combination of large occupancy of primary valleys and carrier-phonon interactions dominated by relatively low energy exchange processes results in an enhanced screening of intrinsic scattering. For electrons, degeneracy yields to transport in secondary valleys, which plays an important role in the decrease of the low field mobility at high concentrations and/or at room temperature. The high-field drift velocity is not much affected by carrier screening because of an increased carrier scattering with surface optical polar phonons, favouring larger phonon wavevector interactions with small dielectric function values.
published_date 2023-04-01T04:22:28Z
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score 11.016235

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